Diodes DMG9N65CTI - Manual (Page 2)

DMG9N65CTI
Document number: DS36027 Rev. 3 - 2
2 of 5
www.diodes.com
January 2013
© Diodes Incorporated
DMG9N65CTI
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage V
DSS
650 V
Gate-Source Voltage V
GSS
±30 V
Continuous Drain Current (Notes 5 & 6)
V
GS
= 10V
Steady
State
T
C
= +25°C
T
C
= +70°C
I
D
9.0
7.0
A
Pulsed Drain Current (Note 7) I
DM
30 A
Avalanche Current (Note 8) V
DD
= 100V, V
GS
= 10V, L = 60mH I
AR
2.7 A
Repetitive avalanche energy (Note 8) V
DD
= 100V, V
GS
= 10V, L = 60mH E
AR
260 mJ
Thermal Characteristics
Characteristic Symbol Max Unit
Power Dissipation (Note 5)
T
C
= +25°C
T
C
= +70°C
P
D
13
8
W
Thermal Resistance, Junction to Case (Note 5) T
C
= +25°C R
θJC
8.84 °C/W
Operating and Storage Temperature Range T
J , T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
BV
DSS
650 - - V V
GS
= 0V, I
D
= 250µA
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
- - 1.0 µA V
DS
= 650V, V
GS
= 0V
Gate-Source Leakage I
GSS
- - ±100 nA V
GS
= ±30V, V
DS
= 0V
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
V
GS(th)
3 - 5 V V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance R
DS (ON)
- 0.7 1.3 Ω V
GS
= 10V, I
D
= 4.5A
Forward Transfer Admittance |Y
fs
| - 8.5 - S V
DS
= 40V, I
D
= 4.5A
Diode Forward Voltage V
SD
- 0.7 1.0 V V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
C
iss
- 2310 -
pF
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
- 122 -
Reverse Transfer Capacitance C
rss
- 2.2 -
Gate Resistance R
g
- 2.2 - Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge V
GS
= 10V Q
g
- 39 -
nC
V
GS
= 10V, V
DS
= 520V,
I
D
= 8A
Gate-Source Charge Q
gs
- 8.5 -
Gate-Drain Charge Q
gd
- 11.9 -
Turn-On Delay Time t
D(on)
- 39 - ns
V
GS
= 10V, V
DS
= 325V,
R
G
= 25Ω, I
D
= 8A
Turn-On Rise Time t
r
- 29 - ns
Turn-Off Delay Time t
D(off)
- 122 - ns
Turn-Off Fall Time t
f
- 28 - ns
Body Diode Reverse Recovery Time t
rr
- 570 - ns dI/dt = 100A/µs, V
DS
= 100V,
I
F
= 8A Body Diode Reverse Recovery Charge Q
rr
- 4.17 - μC
Notes: 5. Device mounted on an infinite heatsink.
6. Drain current limited by maximum junction temperature.
7. Repetitive rating, pulse width limited by junction temperature.
8. I
AR
and E
AR
rating are based on low frequency and duty cycles to keep T
J
= +25°C.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to production testing.