Diodes DMN10H170SK3 User Manual
Page 4
DMN10H170SK3
Document number: DS35734 Rev. 4
4 of 6
May 2013
© Diodes Incorporated
DMN10H170SK3
N
EW
PR
O
D
U
C
T
0
0.5
1.0
1.5
2.0
2.5
3.0
-50
-25
0
25
50
75
100
125
150
T , JUNCTION TEMPERATURE ( C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
J
°
V
,
G
A
T
E
T
H
R
E
S
H
O
L
D
V
O
L
T
A
G
E
(
V
)
G
S
(t
h
)
I = 250µA
D
0
1
2
3
4
5
6
7
8
9
10
0
0.2
0.4
0.6
0.8
1.0
1.2
V
, SOURCE-DRAIN VOLTAGE (V)
SD
Fig.8 Diode Forward Voltage vs. Current
I
,
S
O
U
R
C
E
C
U
R
R
E
N
T
(
V
)
S
T = 25°C
A
0
10
20
30
40
50
60
70
80
90 100
V
, DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 9 Typical Drain-Source Leakage Current vs. Voltage
1
10
100
1,000
10,000
I
,
D
R
A
IN
L
E
A
K
A
G
E
C
U
R
R
E
N
T
(
n
A
)
D
S
S
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
T = -55°C
A
0
10
20
30
40
C
,
J
U
N
C
T
IO
N
C
A
P
A
C
IT
A
N
C
E
(
p
F
)
T
V
, DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 10 Typical Junction Capacitance
C
iss
C
oss
C
rss
f = 1MHz
0
2
4
6
8
10
Q
(nC)
g
, TOTAL GATE CHARGE
Fig. 11 Gate Charge
0
2
4
6
8
10
V
G
A
T
E
T
H
R
E
S
H
O
L
D
V
O
L
T
A
G
E
(
V
)
G
S
V
= 80V
I =
A
DS
D
12.8