Dmn30h4d0lfde new prod uc t, Dmn30h4d0lfde – Diodes DMN30H4D0LFDE User Manual
Page 4
DMN30H4D0LFDE
Document number: DS36380 Rev. 4 - 2
4 of 6
May 2014
© Diodes Incorporated
DMN30H4D0LFDE
NEW PROD
UC
T
-50 -25
0
25
50
75
100
125
150
T , JUNCTION TEMPERATURE ( C)
Figure 7 On-Resistance Variation with Temperature
J
°
R
, D
R
AI
N-
S
O
U
R
C
E
O
N-
R
ESI
S
TAN
C
E (
)
DS
(O
N)
Ω
0
1
2
3
4
5
6
7
8
V
=
V
I = 1A
GS
D
10
V
=
V
I = 200mA
GS
D
2.7
-50
-25
0
25
50
75
100
125
150
T , JUNCTION TEMPERATURE ( C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
J
°
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
(t
h
)
0
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
2.0
1.0
I = 1mA
D
I = 250µA
D
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 9 Diode Forward Voltage vs. Current
I,
S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
0
0.2
0.4
0.6
0.8
0
0.3
0.6
0.9
1.2
1.5
1.0
T = 125°C
A
T = 85°C
A
T = 150°C
A
T = -55°C
A
T = 25°C
A
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 10 Typical Junction Capacitance
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
A
N
C
E (
pF)
T
1
10
100
1000
0
10
20
30
40
C
iss
f = 1MHz
C
oss
C
rss
Q
(nC)
g
, TOTAL GATE CHARGE
Figure 11 Gate Charge
V
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
0
1
2
3
4
5
6
7
8
9
0
1
2
3
4
5
6
7
10
V
= 192V
I =
A
DS
D
0.5