Diodes DMG1013T User Manual
Dmg1013t new prod uc t, Product summary, Features and benefits
DMG1013T
Document number: DS31784 Rev. 5 - 2
1 of 6
March 2012
© Diodes Incorporated
DMG1013T
NEW PROD
UC
T
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(on)
I
D
T
A
= 25
°C
-20V
700m
Ω @ V
GS
= -4.5V
-460mA
900m
Ω @ V
GS
= -2.5V
-420mA
1300m
Ω @ V
GS
= -1.8V
-350mA
Features and Benefits
• Low
On-Resistance
•
Low Gate Threshold Voltage
•
Low Input Capacitance
•
Fast Switching Speed
•
Low Input/Output Leakage
•
ESD Protected Up To 3kV
•
Lead Free By Design/RoHS Compliant (Note 1)
•
"Green" Device (Note 2)
•
Qualified to AEC-Q101 standards for High Reliability
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(on)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
• DC-DC
Converters
• Load
switch
•
Power management functions
Mechanical Data
• Case:
SOT523
•
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020
• Terminals:
Finish
⎯ Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
•
Terminal Connections: See Diagram
•
Weight: 0.002 grams (approximate)
Ordering Information
(Note 3)
Part Number
Case
Packaging
DMG1013T-7
SOT523
3000/Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.
2. Diodes Inc's "Green" policy can be found on our w
3. For packaging details, go to our website at
Marking Information
Date Code Key
Year
2009
2010
2011
2012
2013
2014
2015 2015 2015
Code
W X Y Z A B C C C
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT523
Top View
Equivalent Circuit
Top View
G
S
D
PA1 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: W = 2009)
M = Month (ex: 9 = September)
PA1
YM
Source
Gate
Protection
Diode
Gate
Drain
ESD PROTECTED TO 3kV