Diodes DMG1013UW - Manual

DMG1013UW
Document number: DS31861 Rev. 3 - 2
1 of 6
www.diodes.com
September 2013
© Diodes Incorporated
DMG1013UW
P-CHANNEL ENHANCEMENT MODE MOSFET
Features
 Low On-Resistance
 Low Gate Threshold Voltage
 Low Input Capacitance
 Fast Switching Speed
 Low Input/Output Leakage
 ESD Protected
 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
 Case: SOT-323
 Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
 Moisture Sensitivity: Level 1 per J-STD-020
 Terminal Connections: See Diagram Below
 Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
 Weight: 0.006 grams (approximate)
Ordering Information
(Note 4)
Part Number Case Packaging
DMG1013UW-7 SOT-323 3000 / Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
Date Code Key
Year 2008 2009 2010 2011 2012 2013 2014 2015
Code V W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
ESD PROTECTED
Equivalent Circuit Top View Top View
Source
Gate
Protection
Diode
Gate
Drain
G S
D
PA1 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y̅M = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y̅ = Year (ex: A = 2013)
M = Month (ex: 9 = September)
PA1
YM
Chengdu A/T Site Shanghai A/T Site
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