Diodes DMG1023UV - Manual (Page 2)

DMG1023UV
Document number: DS31975 Rev. 6 - 2
2 of 6
www.diodes.com
March 2012
© Diodes Incorporated
DMG1023UV
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source Voltage V DSS
-20 V
Gate-Source Voltage V
GSS
±6 V
Continuous Drain Current (Note 4) V
GS
= -4.5V
Steady
State
T
A
= 25°C
T
A
= 85°C
I
D
-1.03
-0.68
A
Pulsed Drain Current (Note 5) I
DM
-3 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4) P
D
530 mW
Thermal Resistance, Junction to Ambient @T
A
= 25°C (Note 4) R θJA 235 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
-20 - - V V
GS
= 0V, I
D
= -250 μA
Zero Gate Voltage Drain Current T
J
= 25°C I
DSS
- - -100 nA V
DS
= -20V, V
GS
= 0V
Gate-Source Leakage I
GSS
- - ±2.0 μA V
GS
= ±4.5V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
-0.5 - -1.0 V V
DS
= V
GS
, I
D
= -250 μA
Static Drain-Source On-Resistance R
DS (ON)
-
0.5 0.75
Ω
V
GS
= -4.5V, I
D
= -430mA
0.7 1.05 V
GS
= -2.5V, I
D
= -300mA
1.0 1.5 V
GS
= -1.8V, I
D
= -150mA
- 20 V
GS
= -1.7V, I
D
= -100mA
- 25 V
GS
= -1.5V, I
D
= -100mA
Forward Transfer Admittance |Y fs | - 0.9 - S V DS = -10V, I D = -250mA
Diode Forward Voltage V
SD
-0.8 -1.2 V V
GS
= 0V, I
S
= -150mA
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C iss
- 59.76 - pF
V
DS
= -16V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
- 12.07 - pF
Reverse Transfer Capacitance C
rss
- 6.36 - pF
Total Gate Charge Q g
- 622.4 - pC
V
GS
= -4.5V, V
DS
= -10V,
I
D
= -250mA
Gate-Source Charge Q
gs
- 100.3 - pC
Gate-Drain Charge Q
gd
- 132.2 - pC
Turn-On Delay Time t
D(on)
- 5.1 - ns
V
DD
= -10V, V
GS
= -4.5V,
R L = 47 Ω, R
G = 10 Ω,
I D = -200mA
Turn-On Rise Time t
r
- 8.1 - ns
Turn-Off Delay Time t
D(off)
- 28.4 - ns
Turn-Off Fall Time t
f
- 20.7 - ns
Notes: 4. Device mounted on FR-4 PCB, with minimum recommended pad layout.
5. Repetitive rating, pulse width limited by junction temperature.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.