Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DMG1023UV User Manual

Page 2: Dmg1023uv

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DMG1023UV

Document number: DS31975 Rev. 6 - 2

2 of 6

www.diodes.com

March 2012

© Diodes Incorporated

DMG1023UV





Maximum Ratings

@T

A

= 25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

V

DSS

-20 V

Gate-Source Voltage

V

GSS

±6 V

Continuous Drain Current (Note 4) V

GS

= -4.5V

Steady

State

T

A

= 25°C

T

A

= 85°C

I

D

-1.03
-0.68

A

Pulsed Drain Current (Note 5)

I

DM

-3 A




Thermal Characteristics

Characteristic Symbol

Value

Unit

Power Dissipation (Note 4)

P

D

530 mW

Thermal Resistance, Junction to Ambient @T

A

= 25°C (Note 4)

R

θJA

235 °C/W

Operating and Storage Temperature Range

T

J

, T

STG

-55 to +150

°C




Electrical Characteristics

@T

A

= 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage

BV

DSS

-20 - - V

V

GS

= 0V, I

D

= -250

μA

Zero Gate Voltage Drain Current T

J

= 25°C

I

DSS

- -

-100

nA

V

DS

= -20V, V

GS

= 0V

Gate-Source Leakage

I

GSS

- -

±2.0

μA

V

GS

= ±4.5V, V

DS

= 0V

ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage

V

GS(th)

-0.5 - -1.0 V

V

DS

= V

GS

, I

D

= -250

μA

Static Drain-Source On-Resistance

R

DS (ON)

-

0.5 0.75

V

GS

= -4.5V, I

D

= -430mA

0.7 1.05

V

GS

= -2.5V, I

D

= -300mA

1.0 1.5

V

GS

= -1.8V, I

D

= -150mA

- 20

V

GS

= -1.7V, I

D

= -100mA

- 25

V

GS

= -1.5V, I

D

= -100mA

Forward Transfer Admittance

|Y

fs

|

- 0.9 - S

V

DS

= -10V, I

D

= -250mA

Diode Forward Voltage

V

SD

-0.8

-1.2

V

V

GS

= 0V, I

S

= -150mA

DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance

C

iss

- 59.76 -

pF

V

DS

= -16V, V

GS

= 0V,

f = 1.0MHz

Output Capacitance

C

oss

- 12.07 -

pF

Reverse Transfer Capacitance

C

rss

- 6.36 - pF

Total Gate Charge

Q

g

- 622.4 -

pC

V

GS

= -4.5V, V

DS

= -10V,

I

D

= -250mA

Gate-Source Charge

Q

gs

- 100.3 -

pC

Gate-Drain Charge

Q

gd

- 132.2 -

pC

Turn-On Delay Time

t

D(on)

-

5.1

- ns

V

DD

= -10V, V

GS

= -4.5V,

R

L

= 47

Ω, R

G

= 10

Ω,

I

D

= -200mA

Turn-On Rise Time

t

r

-

8.1

- ns

Turn-Off Delay Time

t

D(off)

-

28.4

- ns

Turn-Off Fall Time

t

f

-

20.7

- ns

Notes:

4. Device mounted on FR-4 PCB, with minimum recommended pad layout.

5. Repetitive rating, pulse width limited by junction temperature.

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to production testing.








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