Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DMG2305UX User Manual

Page 2: Dmg2305ux

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DMG2305UX

Document number: DS36196 Rev. 4 - 2

2 of 5

www.diodes.com

July 2013

© Diodes Incorporated

DMG2305UX




Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Value

Units

Drain-Source Voltage

V

DSS

-20 V

Gate-Source Voltage

V

GSS

±8 V

Continuous Drain Current (Note 5) V

GS

= -4.5V

Steady

State

T

A

= +25°C

T

A

= +70°C

I

D

-4.2
-3.3

A

t<10s

T

A

= +25°C

T

A

= +70°C

I

D

-5.0

-4.0

A

Pulsed Drain Current (Note 6)

I

DM

-10 A




Thermal Characteristics

Characteristic Symbol

Value

Unit

Power Dissipation (Note 5)

P

D

1.4 W

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

R

θJA

90 °C/W

t<10s 64

°C/W

Thermal Resistance, Junction to Case (Note 7)

R

θJC

33 °C/W

Operating and Storage Temperature Range

T

J,

T

STG

-55 to +150

°C




Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Min

Typ

Max

Unit

Test

Condition

OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage

BV

DSS

-20

V

V

GS

= 0V, I

D

= -250µA

Zero Gate Voltage Drain Current T

J

= +25°C

I

DSS

-1.0 µA

V

DS

= -20V, V

GS

= 0V

Gate-Source Leakage

I

GSS

±100 nA

V

GS

= ±8V, V

DS

= 0V

ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

V

GS(th)

-0.5 — -0.9 V

V

DS

= V

GS

, I

D

= -250µA

Static Drain-Source On-Resistance

R

DS(ON)

40

52

m

V

GS

= -4.5V, I

D

= -4.2A

52 100

V

GS

= -2.5V, I

D

= -3.4A

68 200

V

GS

= -1.8V, I

D

= -2A

Forward Transfer Admittance

|Y

fs

|

9

S

V

DS

= -5V, I

D

= -4A

DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance

C

iss

808

pF

V

DS

= -15V, V

GS

= 0V

f = 1.0MHz

Output Capacitance

C

oss

85

pF

Reverse Transfer Capacitance

C

rss

77

pF

Gate Resistance

R

G

15.2

V

GS

= 0V, V

DS

= 0V, f = 1.0MHz

SWITCHING CHARACTERISTICS (Note 8)
Total Gate Charge

Q

g

10.2

nC

V

GS

= -4.5V, V

DS

= -4V,

I

D

= -3.5A

Gate-Source Charge

Q

gs

1.3

nC

Gate-Drain Charge

Q

gd

2.2

nC

Turn-On Delay Time

t

D(on)

10.8

ns

V

DS

= -4V, V

GS

= -4.5V,

R

G

= 6

Ω, I

D

= -1A

Turn-On Rise Time

t

r

13.7

ns

Turn-Off Delay Time

t

D(off)

79.3

ns

Turn-Off Fall Time

t

f

34.7

ns

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

6. Repetitive rating, pulse width limited by junction temperature.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing







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