Diodes DMG3413L - Manual (Page 4)

DMG3413L
Document number: DS35051 Rev. 4 - 2
4 of 6
www.diodes.com
September 2013
© Diodes Incorporated
DMG3413L
NEW PROD
UC
T
V
, G
A
TE
T
H
R
ESHO
L
D VO
L
T
AG
E
(V)
GS
(T
H
)
0
0.4
0.8
1.2
1.6
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
A
0
2
4
6
8
10
12
-V , SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
SD
0 0.2 0.4 0.6 0.8 1 1.2 1.4
-I
, S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
C
, J
UNC
T
ION CAP
A
CIT
A
N
C
E
(p
F
)
T
10
100
10,000
1,000
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
DS
0 5 10 15 20 25 30
C
oss
C
rss
f = 1MHz
C
iss
0 5 10 15 20
Q , TOTAL GATE CHARGE (nC)
Fig. 10 Gate-Charge Characteristics
g
0
2
4
6
8
10
V,
G
A
T
E-
S
O
U
R
C
E V
O
L
T
A
G
E (
V)
GS
t
1
, PULSE DURATION TIME (sec)
Fig. 11 Single Pulse Maximum Power Dissipation
0
50
100
150
200
250
300
350
400
0.00001 0.001 0.1 10 1,000
P
,
P
EAK
T
R
ANSI
E
N
T
P
O
WE
R
(W
)
(p
k
)
Single Pulse
R
= 176 C/W JA

R = R * r
(t) (t)   JA JA
T -T = P * R
J A JA(t)
0.1 1 10 100
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 12 SOA, Safe Operation Area
DS
0.01
0.1
1
10
100
-I
, D
R
AI
N
C
U
R
R
EN
T
(A
)
D
R
Limited
DS(on)
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
T = 150°C
T = 25°C
J(max)
A
V = -8V
Single Pulse
GS
DUT on 1 * MRP Board
P = 10 s
W
µ