Diodes DMP1045U - Manual

DMP1045U
Document number: DS35051 Rev. 4 - 2
1 of 6
www.diodes.com
October 2013
© Diodes Incorporated
DMP1045U
NEW PROD
UC
T
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(on) max
I
D
T
A
= +25°C
-12V
31mΩ@ V
GS
= -4.5V 5.2A
45mΩ@ V
GS
=-2.5V 4.3A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(ON)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
 DC-DC Converters
 Power management functions
 Analog Switch
Features and Benefits
 Low On-Resistance
 Low Input Capacitance
 Fast Switching Speed
 Low Input/Output Leakage
 ESD Protected Up To 3kV
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
 Case: SOT23
 Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
 Moisture Sensitivity: Level 1 per J-STD-020
 Terminal Connections: See Diagram
 Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
 Weight: 0.0072 grams (approximate)
Ordering Information
(Note 4)
Part Number Case Packaging
DMP1045U-7 SOT-23 3,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2010 2011 2012 2013 2014 2015
Code X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
ESD PROTECTED TO 3kV
Top View Internal Schematic Pin Configuration
D
G S
SOT23
Source
Gate
Drain
Gate
Protection
Diode
15P = Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
= Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or = Year (ex: A = 2013)
M = Month (ex: 9 = September)
15P
YM
Chengdu A/T Site Shanghai A/T Site
e3
15P
YM
YM
Y