Diodes DMP1022UFDF - Manual (Page 4)

DMP1022UFDF
D atasheet number: DS36624 Rev. 3 - 2
4 of 6
www.diodes.com
March 2014
© Diodes Incorporated
DMP1022UFDF
N
E
W
P
R
O
D
U
C
T
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
A
V
,
G
A
T
E
T
H
R
E
S
H
O
L
D
V
O
L
T
A
G
E
(
V
)
G
S
(T
H
)
-I = 1mA
D
-I = 250µA
D
0
4
8
12
16
20
0.4 0.6 0.8 1 1.2
-V , SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
SD
-I
,
S
O
U
R
C
E
C
U
R
R
E
N
T
(
A
)
S
T = 25 C
A

0
500
1000
1500
2000
2500
3000
3500
4000
0 3 6 9 12 15
C
,
J
U
N
C
T
IO
N
C
A
P
A
C
IT
A
N
C
E
(
p
F
)
T
-V , DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
DS
C
oss
C
rss
f = 1MHz
C
iss
0
2
4
6
8
0 5 10 15 20 25 30 35 40 45 50
Q , TOTAL GATE CHARGE (nC)
Figure 10 Gate-Charge Characteristics
g
-V
,
G
A
T
E
-S
O
U
R
C
E
V
O
L
T
A
G
E
(
V
)
G
S
V = -6V
I = -10A
DS
D
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t1, PULSE DURATION TIMES (sec)
Figure 11 Transient Thermal Resistance
r(
t)
,
T
R
A
N
S
IE
N
T
T
H
E
R
M
A
L
R
E
S
IS
T
A
N
C
E D = 0.7
D = 0.9
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
Single Pulse
R (t) = r(t) * R
R = 172°C/W
Duty Cycle, D = t1/ t2
 

JA JA
JA