Electrical characteristics, Dmp1022ufde – Diodes DMP1022UFDE User Manual
Page 3
DMP1022UFDE
D
atasheet number: DS35477 Rev. 9 - 2
3 of 7
July 2012
© Diodes Incorporated
DMP1022UFDE
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIMES (sec)
Fig. 3 Transient Thermal Resistance
0.001
0.01
0.1
r(t),
T
R
ANSI
EN
T
T
H
E
R
MA
L
R
ESI
S
T
AN
C
E
1
R
(t)=r(t) * R
θ
θ
JA
JA
R
=61°C/W
Duty Cycle, D=t1/ t2
θJA
D = 0.7
D = 0.9
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
Single Pulse
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-12 — — V
V
GS
= 0V, I
D
= -250
μA
Zero Gate Voltage Drain Current T
J
= +25°C
I
DSS
— — -1 µA
V
DS
= -12V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— — ±2 µA
V
GS
= ±5V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
-0.35 — -0.8 V
V
DS
= V
GS
, I
D
= -250
μA
V
GS(th)
Temperature Coefficient
ΔV
GS(th)
/ΔT
J
- 2.5 —
mV/°C
I
D
= -250
μA
On-State Drain Current
I
D(ON)
-10 — —
A
V
GS
= -4.5V, V
DS
< -5A
Static Drain-Source On-Resistance
R
DS (ON)
—
12 16
m
Ω
V
GS
= -4.5V, I
D
= -8.2A
15 21.5
V
GS
= -2.5V, I
D
= -7.2A
20 26
V
GS
= -1.8V, I
D
= -6.6A
23 32
V
GS
= -1.5V, I
D
= -1A
46 95
V
GS
= -1.2V, I
D
= -1A
Forward Transfer Admittance
|Y
fs
|
—
12 - S
V
DS
= -4V, I
D
= -8.2A
Diode Forward Voltage
V
SD
—
-0.8 -1.2 V
V
GS
= 0V, I
S
= -8A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
— 2953 —
pF
V
DS
= -4V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
— 756 —
Reverse Transfer Capacitance
C
rss
— 678 —
Gate Resistance
R
g
— 8.6 18
Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge
Q
g
— 28.4
42.6
nC
V
GS
= -5V, V
DS
= -4, I
D
= -10A
Total Gate Charge
Q
g
— 25.3 38
V
GS
= -4.5V, V
DS
= -4V,
I
D
= -10A
Gate-Source Charge
Q
gs
— 2.3 —
Gate-Drain Charge
Q
gd
— 7.2 —
Turn-On Delay Time
t
D(on)
— 20 30
ns
V
DS
= -4V, V
GS
= -4.5V,
R
G
= 1
Ω, R
L
= 0.4
Ω, I
D
= -9.8A
Turn-On Rise Time
t
r
— 28 42
Turn-Off Delay Time
t
D(off)
— 117 176
Turn-Off Fall Time
t
f
— 93 139
BODY DIODE CHARACTERISTICS
Diode Forward Voltage
V
SD
—
-0.8 -1.2 V
V
GS
= 0V, I
S
= -9.8A
Continuous Source-Drain Diode Current (Note 6)
I
S
— — -2.5
A
T
A
= +25°C
— — -7.1
T
C
= +25°C
Pulse Diode Forward Current (Note 8)
I
SM
— — -50
—
Bodyy Diode Reverse Recovery Time (Note 8)
t
rr
—
28
56
ns
I
S
= -9.8A, dI/dt = 100A/
μs
Reverse Recovery Fall Time
t
a
—
10
—
Reverse Recovery Rise Time
t
b
—
18
—
Body Diode Reverse Recovery Charge (Note 8)
Q
rr
—
13
26
nC
Notes:
7. Short duration pulse test used to minimize self-heating effect
8. Guaranteed by design. Not subject to production testing