Diodes DMP1245UFCL User Manual
Page 5
DMP1245UFCL
Document number: DS35505 Rev. 1 - 2
5 of 7
November 2011
© Diodes Incorporated
DMP1245UFCL
ADVAN
CE I
N
F
O
RM
ATI
O
N
A Product Line of
Diodes Incorporated
T , AMBIENT TEMPERATURE (°C)
A
Fig. 10 Gate Threshold Variation vs. Ambient Temperature
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
L
T
A
G
E (
V
)
GS
(T
H
)
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-50
-25
0
25
50
75
100
125
150
I = -250µA
D
I = -1mA
D
Fig. 11 Diode Forward Voltage vs. Current
V
, SOURCE-DRAIN VOLTAGE (V)
SD
I,
S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
T = 25°C
A
0
4
8
12
16
20
0.4
0.6
0.8
1
1.2
Fig. 12 Typical Drain-Source Leakage Current vs. Voltage
V
, DRAIN-SOURCE VOLTAGE (V)
DS
I,
L
E
A
K
A
G
E
C
U
R
R
EN
T
(n
A
)
DS
S
1
10
100
1,000
10,000
100,000
0
2
4
6
8
10
12
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0
4
8
12
16
20
V
, DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 13 Typical Junction Capacitance
C
, J
UNCT
IO
N CAP
A
CI
T
A
NCE (
p
F
)
T
0
500
1,000
1,500
2,000
2,500
C
ISS
C
OSS
C
RSS
Fig. 14 Gate-Charge Characteristics
Q , TOTAL GATE CHARGE (nC)
g
V
, GA
T
E
-S
OURCE
VOL
T
AGE (
V
)
GS
V
= -10V
I = -1A
DS
D
0
2
4
6
8
0
5
10
15
20
25
30