Diodes DMP2004DMK - Manual (Page 2)

DMP2004DMK
Document number: DS30939 Rev. 4 - 2
2 of 5
www.diodes.com
August 2012
© Diodes Incorporated
DMP2004DMK
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
-20 V
Gate-Source Voltage V
GSS
±8 V
Drain Current (Note 5) I
D
-550 mA
Pulsed Drain Current I
DM
-1.9 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) P
D
500 mW
Thermal Resistance, Junction to Ambient (Note 5) R θJA 250 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage BV
DSS
-20 ⎯ ⎯ V V
GS
= 0V, I
D
= -250 μA
Zero Gate Voltage Drain Current
IDSS
⎯ ⎯ -1.0 μA
V DS = -20V, V GS = 0V
Gate-Source Leakage I
GSS
⎯ ⎯ ±1.0 μA
V
GS
=
±4.5V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage V GS(th)
-0.5 ⎯ -1.0 V V DS = V GS , I D = -250
μA
Static Drain-Source On-Resistance R
DS (ON)
⎯
0.7
1.1
1.7
0.9
1.4
2.0
Ω
V
GS
= -4.5V, I
D
= -430mA
V
GS
= -2.5V, I
D
= -300mA
V
GS
= -1.8V, I
D
= -150mA
Forward Transfer Admittance |Y
fs
| 200 ⎯ ⎯ mS V
DS
=10V, I
D
= -0.2A
Diode Forward Voltage (Note 6) V
SD
-0.5 ⎯ -1.2 V V
GS
= 0V, I
S
= 115mA
DYNAMIC CHARACTERISTICS
Input Capacitance C
iss
⎯ ⎯ 175 pF
V
DS
= -16V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
⎯ ⎯ 30 pF
Reverse Transfer Capacitance C rss
⎯ ⎯ 20 pF
Notes: 5. Device mounted on FR-4 PCB.
6. Short duration pulse test used to minimize self-heating effect.