Diodes DMP2004DWK - Manual (Page 2)

DMP2004DWK
Document number: DS30940 Rev. 6 - 2
2 of 5
www.diodes.com
January 2014
© Diodes Incorporated
DMP2004DWK
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
-20 V
Gate-Source Voltage V
GSS
±8 V
Drain Current (Note 4)
T
A
= +25 C
T
A
= +85 C
I
D
-430
-310
mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 4) P
D
250 mW
Thermal Resistance, Junction to Ambient R
θJA
500 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-65 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage BV
DSS
-20   V V
GS
= 0V, I
D
= -250μA
Zero Gate Voltage Drain Current I
DSS
  -1.0 μA V
DS
= -20V, V
GS
= 0V
Gate-Source Leakage I
GSS
  1.0 μA V
GS
= 4.5V, V
DS
= 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage V
GS(th)
-0.5  -1.0 V V
DS
= V
GS
, I
D
= -250 A
Static Drain-Source On-Resistance R
DS (ON)

0.7
1.1

1.7
0.9
1.4
2.0
Ω
V
GS
= -4.5V, I
D
= -430mA
V
GS
= -2.5V, I
D
= -300mA
V
GS
= -1.8V, I
D
= -150mA
Forward Transfer Admittance |Y
fs
| 200   ms V
DS
= 10V, I
D
= 0.2A
Diode Forward Voltage (Note 5) V
SD
-0.5  -1.2 V V
GS
= 0V, I
S
= 115mA
DYNAMIC CHARACTERISTICS
Input Capacitance C
iss
  175 pF
V
DS
= -16V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
  30 pF
Reverse Transfer Capacitance C
rss
  20 pF
Notes: 4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.
5. Short duration pulse test used to minimize self-heating effect.
0
0
-V , DRAIN SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
DS
-I
, D
R
AI
N
C
U
R
R
EN
T
(A
)
D
-V , GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
GS
-I
, D
R
AI
N
C
U
R
R
EN
T
(A
)
D