Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DMP2004TK User Manual

Page 2: Dmp2004tk

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DMP2004TK

Document number: DS30932 Rev. 5 - 2

2 of 5

www.diodes.com

August 2012

© Diodes Incorporated

DMP2004TK





Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Value

Units

Drain-Source Voltage

V

DSS

-20 V

Gate-Source Voltage

V

GSS

±8 V

Drain Current (Note 5)

Steady

State

T

A

= +25

°C

T

A

= +85

°C

I

D

-430
-310

mA

Pulsed Drain Current (Note 6)

I

DM

-750 mA




Thermal Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Value

Units

Total Power Dissipation (Note 5)

P

D

150 mW

Thermal Resistance, Junction to Ambient

R

θJA

833 °C/W

Operating and Storage Temperature Range

T

J,

T

STG

-55 to +150

°C




Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Min

Typ

Max

Unit

Test

Condition

OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage

BV

DSS

-20

V

V

GS

= 0V, I

D

= -250

μA

Zero Gate Voltage Drain Current

I

DSS

-1.0

μA

V

DS

= -20V, V

GS

= 0V

Gate-Source Leakage

I

GSS

±1.0

μA

V

GS

=

±4.5V, V

DS

= 0V

ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

V

GS(th)

-0.5

-1.0 V

V

DS

= V

GS

, I

D

= -250

μA

Static Drain-Source On-Resistance

R

DS (ON)

0.7
1.1

1.7

1.1
1.6
2.4

Ω

V

GS

= -4.5V, I

D

= -430mA

V

GS

= -2.5V, I

D

= -300mA

V

GS

= -1.8V, I

D

= -150mA

Forward Transfer Admittance

|Y

fs

|

200

ms

V

DS

=10V, I

D

= 0.2A

Diode Forward Voltage (Note 7)

V

SD

-1.4 V

V

GS

= 0V, I

S

= -115mA

DYNAMIC CHARACTERISTICS
Input Capacitance

C

iss

175 pF

V

DS

= -16V, V

GS

= 0V

f = 1.0MHz

Output Capacitance

C

oss

30 pF

Reverse Transfer Capacitance

C

rss

20 pF

Notes:

5. Device mounted on FR-4 PCB.
6. Pulse width

≤10μS, Duty Cycle ≤1%

7. Short duration pulse test used to minimize self-heating effect.




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