Diodes DMP2006UFG - Manual (Page 4)

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DMP2006UFG
Document number: DS36802 Rev. 2 - 2
4 of 6
www.diodes.com
April 2014
© Diodes Incorporated
DMP2006UFG
ADVAN
CE I
N
F
O
RM
ATI
O
N
ADVAN
CE I
N
F
O
RM
ATI
O
N
0
0.002
0.004
0.006
0.008
0.01
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J

Figure 7 On-Resistance Variation with Temperature
V = -4.5V
I = A
GS
D
-15
V = 5V
I = A
GS
D
-42.
-10
R
, D
R
AI
N-
S
O
U
R
C
E
O
N-
R
ESI
S
TAN
C
E (
)
DS
(o
n
)

0
0.2
0.4
0.6
0.8
1
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
J
V,
G
AT
E
T
H
R
ES
H
O
LD
V
O
LTA
G
E (
V
)
GS(
T
H
)
-I = 1mA
D
-I = 250µA
D
0
5
10
15
20
25
30
0 0.2 0.4 0.6 0.8 1 1.2
V , SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
SD
-I
, S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
T = 150 C
A

T = 125 C
A

T = 85 C
A

T = 25 C
A

T = -55 C
A

100
1000
10000
100000
0 2 4 6 8 10 12 14 16 18 20
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
AN
C
E (
p
F
)
T
-V , DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
DS
C
oss
C
rss
f = 1MHz
C
iss
0
2
4
6
8
10
0 30 60 90 120 150
Q , TOTAL GATE CHARGE (nC)
Figure 11 Gate-Charge Characteristics
g
-V
, G
A
T
E-
S
O
U
R
C
E V
O
LT
A
G
E (
V
)
GS
V = -10V
I = -20A
DS
D
0.01
0.1
1
10
100
0.01 0.1 1 10 100
-V , DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
DS
-I
,
D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
R
Limited
DS(on)
DC
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
T = 150°C
T = 25°C
J(max)
A
V = 4.5V
Single Pulse
GS
DUT on 1 * MRP Board
P = 10s
W