Diodes DMP2012SN - Manual (Page 2)

DMP2012SN
Document number: DS30790 Rev. 7 - 2
2 of 5
www.diodes.com
September 2013
© Diodes Incorporated
DMP2012SN
Maximum Ratings
(@T A = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage V
DSS
-20 V
Gate-Source Voltage V GSS
12 V
Drain Current (Note 5) Steady State I
D
-0.7 A
Pulsed Drain Current (Note 6) I
DM
-2.8 A
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5) P D
500 mW
Thermal Resistance, Junction to Ambient R JA 250 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Electrical Characteristics
(@T A = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV DSS
-20   V V GS = 0V, I D = -250µA
Zero Gate Voltage Drain Current I
DSS
  -10 µA V
DS
= -20V, V
GS
= 0V
Gate-Body Leakage I
GSS
  10 µA V
GS
= 12V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
-0.5  -1.2 V V
DS
= V
GS
, I
D
= -250µA
Static Drain-Source On-Resistance R
DS (ON)

0.23
0.37 0.30
0.50
Ω
V
GS
= -4.5V, I
D
= -0.4A
V
GS
= -2.5V, I
D
= -0.4A
Forward Transfer Admittance |Y
fs
|
 1.5  S V
DS
= -10V, I
D
= -0.4A
Diode Forward Voltage (Note 7) V
SD
 -0.8 -1.1 V V
GS
= 0V, I
S
= -0.7A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
 178.5  pF
V
DS
= -10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
 26.3  pF
Reverse Transfer Capacitance C rss
 18.8  pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
 10.4  ns
V
DD
= -10V, I
D
= -0.4A,
V
GS
= -5.0V, R
GEN
= 50 Ω
Turn-Off Delay Time t D(OFF)
 175  ns
Turn-On Rise Time t
r
 22.3  ns
Turn-Off Fall Time t
f
 64  ns
Notes: 5. Device mounted on FR-4 PCB.
6. Pulse width 10µS, Duty Cycle 1%.
7. Short duration pulse test used to minimize self-heating effect.