Diodes DMP2022LSS - Manual (Page 2)

DMP2022LSS
Document number: DS31373 Rev. 5 - 2
2 of 5
www.diodes.com
June 2010
© Diodes Incorporated
DMP2022LSS
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
BV
DSS
-20 ⎯ ⎯ V V
GS
= 0V, I
D
= -250
μA
Zero Gate Voltage Drain Current I
DSS
⎯ ⎯ -1 μA
V
DS
= -20V, V
GS
= 0V
Gate-Source Leakage I
GSS
⎯ ⎯ ±100 nA V
GS
=
±12V, V
DS
= 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
GS(th)
-0.6 0.77 -1.1 V V
DS
= V
GS
, I
D
= -250
μA
Static Drain-Source On-Resistance R
DS (ON)
⎯ 8 13
m
Ω
V
GS
= -10V, I
D
= -10A
⎯ 11 16 V
GS
= -4.5V, I
D
= -9A
⎯ 17 22 V GS = -2.5V, I D = -8A
Forward Transconductance g fs
⎯ 28 ⎯ S V DS = -10V, I D = -10A
Diode Forward Voltage (Note 5) V
SD
-0.5 0.68 -1.2 V V
GS
= 0V, I
S
= -3A
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
C
iss
⎯ 2444 ⎯ pF
V
DS
= -10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
⎯ 594 ⎯ pF
Reverse Transfer Capacitance C
rss
⎯ 556 ⎯ pF
Gate Resistance R
G
⎯ 2.0 ⎯ Ω
V
GS
= 0V V
DS
= 0V, f = 1MHz
SWITCHING CHARACTERISTICS (Note 6)
Total Gate Charge Q
g
⎯ 28.1
56.9 ⎯
nC
V
DS
= -10V, V
GS
= -4.5V, I
D
= -10A
V
DS
= -10V, V
GS
= -10V, I
D
= -10A
Gate-Source Charge Q gs
⎯ 3.4 ⎯
V DS = -10V, V GS = -10V, I D = -10A
Gate-Drain Charge Q
gd
⎯ 11.9 ⎯
V
DS
= -10V, V
GS
= -10V, I
D
= -10A
Turn-On Delay Time t
D(on)
⎯ 7.5 15
ns
V
DD
= -15V, I
D
= -1A, V
GS
= -10V,
R
GEN
= 6 Ω
Turn-On Rise Time t
r
⎯ 9.9 20
Turn-Off Delay Time t
D(off)
⎯ 108.0 216
Turn-Off Fall Time t
f
⎯ 76.5 153
Notes: 5. Short duration pulse test used to minimize self-heating effect.
6. Guaranteed by design. Not subject to product testing.
0 0.5 1.0 1.5 2.0
Fig. 1 Typical Output Characteristic
-V , DRAIN-SOURCE VOLTAGE (V)
DS
0
5
10
15
20
25
30
-I
, D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
Fig. 2 Typical Transfer Characteristics
0
5
10
15
20
25
30
0.5 1 1.5 2 2.5
-V , GATE SOURCE VOLTAGE (V)
GS
-I
, D
R
AI
N
C
U
R
R
EN
T
(A
)
D
V = -5V
Pulsed
DS