Diodes DMP2035U - Manual (Page 2)

DMP2035U
Document number: DS31830 Rev. 2 - 2
2 of 6
www.diodes.com
December 2011
© Diodes Incorporated
DMP2035U
NEW PROD
UC
T
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source Voltage V DSS
-20 V
Gate-Source Voltage V
GSS
±8 V
Continuous Drain Current (Note 4)
Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
-3.6
-2.9
A
Pulsed Drain Current (Note 5) I
DM
-24 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4) P
D
0.81 W
Thermal Resistance, Junction to Ambient @T
A
= 25°C R θJA 153.5 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV DSS
-20 - - V V GS = 0V, I D = -250 μA
Zero Gate Voltage Drain Current T
J
= 25°C I
DSS
- - -1.0 μA V
DS
= -20V, V
GS
= 0V
Gate-Source Leakage I
GSS
- - ±10 μA V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
-0.4 -0.7 -1.0 V V
DS
= V
GS
, I
D
= -250 μA
Static Drain-Source On-Resistance R DS(ON)
-
23
30
41 35
45
62
mΩ
V
GS
= -4.5V, I
D
= -4.0A
V GS = -2.5V, I D = -4.0A
V
GS
= -1.8V, I
D
= -2.0A
Forward Transfer Admittance |Y
fs
| - 14 - S V
DS
= -5V, I
D
= -4A
Diode Forward Voltage V
SD
- -0.7 -1.0 V V
GS
= 0V, I
S
= -1A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
- 1610 - pF
V
DS
= -10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C oss
- 157 - pF
Reverse Transfer Capacitance C
rss
- 145 - pF
Gate Resistance R
g
- 9.45 - Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge Q g
- 15.4 - nC
V
GS
= -4.5V, V
DS
= -10V,
I
D
= -4A
Gate-Source Charge Q
gs
- 2.5 - nC
Gate-Drain Charge Q
gd
- 3.3 - nC
Turn-On Delay Time t D(on)
- 16.8 - ns
V
DS
= -10V, V
GS
= -4.5V,
R
L
= 10 Ω, R
G
= 6.0 Ω, I
D
= -1A
Turn-On Rise Time t
r
- 12.4 - ns
Turn-Off Delay Time t
D(off)
- 94.1 - ns
Turn-Off Fall Time t
f
- 42.4 - ns
Notes: 4. Device mounted on FR-4 PCB with 2 oz. Copper and test pulse width t أ10s.
5. Repetitive rating, pulse width limited by junction temperature.
6. Short duration pulse test used to minimize self-heating effect.