Diodes DMP2035UVT - Manual (Page 2)

DMP2035UVT
Document number: DS35190 Rev. 5 - 2
2 of 6
www.diodes.com
March 2012
© Diodes Incorporated
DMP2035UVT
Maximum Ratings
@T A = 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
-20 V
Gate-Source Voltage V
GSS
±12 V
Continuous Drain Current (Note 5) V
GS
= -4.5V
Steady
State
T A = 25
°C
T
A
= 70
°C
I D
-6.0
-4.8
A
t<10s
T
A
= 25
°C
T
A
= 70 °C
I
D
-7.2
-5.7
A
Continuous Drain Current (Note 5) V
GS
= -2.5V
Steady
State
T
A
= 25 °C
T A = 70
°C
I D
-5.2
-4.1
A
t<10s
T
A
= 25
°C
T
A
= 70
°C
I
D
-6.2
-4.9
A
Maximum Continuous Body Diode Forward Current (Note 5) I
S
-2.0 A
Pulsed Drain Current (10 μs pulse, duty cycle = 1%)
I DM
-24 A
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Total Power Dissipation (Note 4) P
D
1.2 W
Thermal Resistance, Junction to Ambient (Note 4)
Steady State
R θJA
106
°C/W
t<10s 74
Total Power Dissipation (Note 5) P
D
2.0 W
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
R θJA
65
°C/W t<10s 46
Thermal Resistance, Junction to Case (Note 5) Steady State R θJC 11.8
Operating and Storage Temperature Range T
J,
T
STG
-55 to 150 °C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
-20 ⎯ ⎯ V V
GS
= 0V, I
D
= -250 μA
Zero Gate Voltage Drain Current I DSS
⎯ ⎯ -1 µA V DS = -20V, V GS = 0V
Gate-Source Leakage I
GSS
⎯ ⎯ ±10 µA V
GS
=
±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
-0.4 -0.7 -1.5 V V
DS
= V
GS
, I
D
= -250
μA
Gate Threshold Voltage Temperature Coefficient
△
V
GS(th)
/
△
T
J
⎯ 2.5 ⎯ mV/°C I
D
= -250 μA , Referenced to 25°C
Static Drain-Source On-Resistance R
DS (ON)
⎯ 23 35
m
Ω
V GS = -4.5V, I D = -4.0A
⎯ 30 45 V
GS
= -2.5V, I
D
= -4.0A
⎯ 41 62 V
GS
= -1.8V, I
D
= -2.0A
Forward Transfer Admittance |Y
fs
| ⎯ 18 ⎯ S V
DS
= -5V, I
D
= -5.5A
Diode Forward Voltage (Note 5) V
SD
⎯ -0.7 -1.0 V V
GS
= 0V, I
S
= -1A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C iss
⎯ 1610 2400
pF
V
DS
= -10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
⎯ 157 210
Reverse Transfer Capacitance C
rss
⎯ 145 200
Gate Resistance R
G
⎯ 9.4 14.1 Ω V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge Q
g
⎯ 15.4 23.1
nC
V
DS
= -10V, V
GS
= -4.5V
I
D
= -4A
Gate-Source Charge Q
gs
⎯ 2.5 ⎯
Gate-Drain Charge Q
gd
⎯ 3.3 ⎯
Turn-On Delay Time t D(on)
⎯ 17 33
ns
V GS = -4.5V, V DS = -10V, R G = 6
Ω,
I
D
= -1A, R
L
= 10
Ω
Turn-On Rise Time t
r
⎯ 12 19
Turn-Off Delay Time t
D(off)
⎯ 94 150
Turn-Off Fall Time t f
⎯ 42 64
Reverse Recovery Time t
rr
⎯ 14 25 ns
I F =-4.5A, di/dt=100A/µS
Reverse Recovery Charge Q
rr
⎯ 4 8 nC
Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.