Diodes DMP2039UFDE - Manual (Page 2)

DMP2039UFDE
Document number: DS35420 Rev. 5 - 2
2 of 6
www.diodes.com
July 2012
© Diodes Incorporated
DMP2039UFDE
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
-25 V
Gate-Source Voltage V
GSS
±8 V
Continuous Drain Current (Note 5) V
GS
= -4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-6.7
-5.3
A
t<5s
T
A
= +25°C
T
A
= +70°C
I
D
-8.3
-6.6
A
Continuous Drain Current (Note 5) V
GS
= -1.8V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-5.4
-4.3
A
t<5s
T A = +25°C
T
A
= +70°C
I D
-6.6
-5.2
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%) I
DM
-60 A
Continuous Source-Drain Diode Current I
S
-2.0 A
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
0.8
W
T
A
= +70°C 1.2
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R θJA
160
°C/W
t<5s 104
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
2.0
W
T A = +70°C 2.9
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R θJA
63
°C/W
t<5s 42
Thermal Resistance, Junction to Case (Note 6) Steady state R θJC 10.8 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-25 ⎯ ⎯ V V
GS
= 0V, I
D
= -250µA
Zero Gate Voltage Drain Current I
DSS
⎯ ⎯ -1 µA V
DS
= -25V, V
GS
= 0V
Gate-Source Leakage I
GSS
⎯ ⎯ ±10 µA V
GS
= ±8.0V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
-0.4 ⎯ -1.0 V V
DS
= V
GS
, I
D
= -250µA
Static Drain-Source On-Resistance R
DS (ON)
⎯ 20 27
m Ω
V GS = -4.5V, I D = -6.4A
⎯ 24 34 V
GS
= -2.5V, I
D
= -4.8A
⎯ 28 40 V
GS
= -1.8V, I
D
= -2.5A
⎯ 33 70 V
GS
= -1.5V, I
D
= -1.5A
Forward Transfer Admittance |Y fs |
⎯ 16 ⎯ S V DS = -5V, I D = -4A
Diode Forward Voltage V
SD
⎯ -0.7 -1.0 V V
GS
= 0V, I
S
= -1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
⎯ 2530 ⎯ pF
V
DS
= -15V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
⎯ 203 ⎯ pF
Reverse Transfer Capacitance C
rss
⎯ 177 ⎯ pF
Gate Resistance R
g
⎯ 9.1 ⎯ Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= -4.5V) Q
g
⎯ 28.2 ⎯ nC
V
DS
= -15V, I
D
= -4.0A
Total Gate Charge (V
GS
= -8V Q
g
⎯ 48.7 ⎯ nC
Gate-Source Charge Q gs
⎯ 3.2 ⎯ nC
Gate-Drain Charge Q
gd
⎯ 5.0 ⎯ nC
Turn-On Delay Time t
D(on)
⎯ 15.1 ⎯ ns
V
DD
= -15V, V
GS
= -4.5V, R
G
= 1 Ω,
I
D
= -4.0A
Turn-On Rise Time t r
⎯ 23.5 ⎯ ns
Turn-Off Delay Time t
D(off)
⎯ 137.6 ⎯ ns
Turn-Off Fall Time t
f
⎯ 80.5 ⎯ ns
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
7. Short duration pulse test used to minimize self-heating effect
8. Guaranteed by design. Not subject to production testing.