Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DMP2039UFDE4 User Manual

Page 2

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DMP2039UFDE4

Document number: DS35675 Rev. 3 - 2

2 of 6

www.diodes.com

March 2012

© Diodes Incorporated

DMP2039UFDE4

Maximum Ratings

@T

A

= 25°C unless otherwise specified

Characteristic Symbol

Value

Units

Drain-Source Voltage

V

DSS

-25 V

Gate-Source Voltage

V

GSS

±8 V

Continuous Drain Current (Note 5) V

GS

= -4.5V

Steady

State

T

A

= 25°C

T

A

= 70°C

I

D

-7.3
-5.8

A

t<5s

T

A

= 25°C

T

A

= 70°C

I

D

-9.2
-7.3

A

Continuous Drain Current (Note 5) V

GS

= -1.8V

Steady

State

T

A

= 25°C

T

A

= 70°C

I

D

-6.0
-4.7

A

t<5s

T

A

= 25°C

T

A

= 70°C

I

D

-7.6
-6.0

A

Pulsed Drain Current (10

µ

s pulse, duty cycle = 1%)

I

DM

-60 A

Continuous Source-Drain Diode Current

I

S

-2.0 A

Thermal Characteristics

@T

A

= 25°C unless otherwise specified

Characteristic Symbol

Value

Units

Total Power Dissipation (Note 4)

T

A

= 25°C

P

D

0.69

W

T

A

= 70°C

0.44

Thermal Resistance, Junction to Ambient (Note 4)

Steady state

R

θJA

182

°C/W

t<5s 113

Total Power Dissipation (Note 5)

T

A

= 25°C

P

D

2.4

W

T

A

= 70°C

1.5

Thermal Resistance, Junction to Ambient (Note 5)

Steady state

R

θJA

52

°C/W

t<5s 33

Thermal Resistance, Junction to Case (Note 5)

Steady state

R

θJC

9.1 °C/W

Operating and Storage Temperature Range

T

J,

T

STG

-55 to +150

°C

Electrical Characteristics

@T

A

= 25°C unless otherwise specified

Characteristic Symbol

Min

Typ

Max

Unit

Test

Condition

OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage

BV

DSS

-25

V

V

GS

= 0V, I

D

= -250

μA

Zero Gate Voltage Drain Current

I

DSS

-1

µA

V

DS

= -25V, V

GS

= 0V

Gate-Source Leakage

I

GSS

±10

µA

V

GS

=

±8.0V, V

DS

= 0V

ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage

V

GS(th)

-0.4

-1.0 V

V

DS

= V

GS

, I

D

= -250

μA

Static Drain-Source On-Resistance

R

DS (ON)

19 26

m

Ω

V

GS

= -4.5V, I

D

= -6.4A

24 33

V

GS

= -2.5V, I

D

= -4.8A

29 40

V

GS

= -1.8V, I

D

= -2.5A

35 70

V

GS

= -1.5V, I

D

= -1.5A

Forward Transfer Admittance

|Y

fs

|

14

mS

V

DS

= -5V, I

D

= -4A

Diode Forward Voltage (Note 5)

V

SD

-0.7 -1.0 V

V

GS

= 0V, I

S

= -1A

DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance

C

iss

2530

pF

V

DS

= -15V, V

GS

= 0V

f = 1.0MHz

Output Capacitance

C

oss

203

pF

Reverse Transfer Capacitance

C

rss

177

pF

Gate Resistance

R

g

9.1

Ω

V

DS

= 0V, V

GS

= 0V, f = 1.0MHz

Total Gate Charge

Q

g

28.2

nC

V

DS

= -15V, I

D

= -4.0A

Gate-Source Charge

Q

gs

48.7

Gate-Drain Charge

Q

gd

3.2

Turn-On Delay Time

t

D(on)

5.0

nS

V

DD

= -15V, V

GS

= -4.5V, R

G

= 1

Ω,

I

D

= -4.0A

Turn-On Rise Time

t

r

15.1

Turn-Off Delay Time

t

D(off)

23.5

Turn-Off Fall Time

t

f

137.6

Notes:

4. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
6. Short duration pulse test used to minimize self-heating effect

7. Guaranteed by design. Not subject to production testing.


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