Dmp2066lsd new prod uc t, Maximum ratings, Thermal characteristics – Diodes DMP2066LSD User Manual

Page 2: Electrical characteristics, Dmp2066lsd

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DMP2066LSD

Document number: DS31453 Rev. 4 - 2

2 of 5

www.diodes.com

January 2014

© Diodes Incorporated

DMP2066LSD

NEW PROD

UC

T




Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Value

Units

Drain-Source Voltage

V

DSS

-20 V

Gate-Source Voltage

V

GSS

±12

V

Drain Current (Note 5) Steady
State

T

A

= +25°C

T

A

= +70°C

I

D

-5.8
-4.6

A

Pulsed Drain Current (Note 6)

I

DM

-20 A



Thermal Characteristics

Characteristic Symbol

Value

Unit

Total Power Dissipation (Note 5)

P

D

2.0 W

Thermal Resistance, Junction to Ambient (Note 5)

R

θJA

62.5 °C/W

Operating and Storage Temperature Range

T

J,

T

STG

-55 to +150

°C


Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Min

Typ

Max

Unit

Test

Condition

OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage

BV

DSS

-20

V

V

GS

= 0V, I

D

= -250µA

Zero Gate Voltage Drain Current

I

DSS

-1 µA

V

DS

= -20V, V

GS

= 0V

Gate-Source Leakage

I

GSS

±100

nA

V

GS

=

±12V, V

DS

= 0V

ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

V

GS(th)

-0.6 -0.94 -1.2 V

V

DS

= V

GS

, I

D

= -250µA

Static Drain-Source On-Resistance

R

DS (ON)

29
55

40
70

m

Ω

V

GS

= -4.5V, I

D

= -4.6A

V

GS

= -2.5V, I

D

= -3.8A

Forward Transconductance

g

fs

9

S

V

DS

= -10V, I

D

= -4.6A

Diode Forward Voltage (Note 7)

V

SD

-0.5 -0.72 -1.4 V

V

GS

= 0V, I

S

= -2.1A

DYNAMIC CHARACTERISTICS
Input Capacitance

C

iss

820

pF

V

DS

= -15V, V

GS

= 0V

f = 1.0MHz

Output Capacitance

C

oss

200

pF

Reverse Transfer Capacitance

C

rss

160

pF

Gate Resistance

R

G

2.5

Ω

V

DS

= 0V, V

GS

= 0V

f = 1.0MHz

SWITCHING CHARACTERISTICS
Total Gate Charge

Q

G

10.1

nC

V

DS

= -10V, V

GS

= -4.5V,

I

D

= -5.9A

Gate-Source Charge

Q

GS

1.5

Gate-Drain Charge

Q

GD

4.3

Turn-On Delay Time

t

d(on)

4.4

ns

V

DS

= -10V, V

GS

= -4.5V,

I

D

= -1A, R

G

= 6.0

Ω

Rise Time

t

r

9.9

Turn-Off Delay Time

t

d(off)

28.0

Fall Time

t

f

23.4

Notes:

5. Device mounted on 2 oz. 1” x 1” Copper pads on 2” x 2” FR-4 PCB.
6. Pulse

width

≤10μS, Duty Cycle ≤1%.

7. Short duration pulse test used to minimize self-heating effect.










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