Dmp2066lss new prod uc t, Maximum ratings, Thermal characteristics – Diodes DMP2066LSS User Manual

Page 2: Electrical characteristics

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DMP2066LSS

Document number: DS31522 Rev. 3 - 2

2 of 5

www.diodes.com

November 2013

© Diodes Incorporated

DMP2066LSS

NEW PROD

UC

T



Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Value

Units

Drain-Source Voltage

V

DSS

-20 V

Gate-Source Voltage

V

GSS

±12

V

Drain Current (Note 5) Steady
State

T

A

= +25°C

T

A

= +70°C

I

D

-6.5
-5.2

A

Pulsed Drain Current (10μs pulse, duty cycle = 1%)

I

DM

-26 A



Thermal Characteristics

Characteristic Symbol

Value

Unit

Total Power Dissipation (Note 5)

P

D

2.5 W

Thermal Resistance, Junction to Ambient (Note 5)

R

θJA

50 °C/W

Operating and Storage Temperature Range

T

J,

T

STG

-55 to +150

°C



Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Min

Typ

Max

Unit

Test

Condition

OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage

BV

DSS

-20

⎯

⎯

V

V

GS

= 0V, I

D

= -250μA

Zero Gate Voltage Drain Current

I

DSS

⎯

⎯

-1

μA

V

DS

= -20V, V

GS

= 0V

Gate-Source Leakage

I

GSS

⎯

⎯

±100

nA

V

GS

=

±12V, V

DS

= 0V

ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage

V

GS(th)

-0.6

⎯

-1.2 V

V

DS

= V

GS

, I

D

= -250μA

Static Drain-Source On-Resistance

R

DS (ON)

⎯

⎯

40

mΩ

V

GS

= -4.5V, I

D

= -5.8A

⎯

⎯

70

V

GS

= -2.5V, I

D

= -3.8A

Forward Transconductance

g

fs

⎯

9

⎯

S

V

DS

= -10V, I

D

= -4.6A

Diode Forward Voltage

V

SD

-0.5 -0.72 -1.4 V

V

GS

= 0V, I

S

= -2.1A

DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance

C

iss

⎯

820

⎯

pF

V

DS

= -15V, V

GS

= 0V

f = 1.0MHz

Output Capacitance

C

oss

⎯

200

⎯

pF

Reverse Transfer Capacitance

C

rss

⎯

160

⎯

pF

Gate Resistance

R

g

⎯

10.4

⎯

Ω

V

DS

= 0V, V

GS

= 0V,

f = 1.0MHz

Total Gate Charge

Q

g

⎯

14.4

⎯

nC

V

DS

= -10V, V

GS

= -4.5V

I

D

= -4.5A

Gate-Source Charge

Q

gs

⎯

2.6

⎯

Gate-Drain Charge

Q

gd

⎯

2.7

⎯

Turn-On Delay Time

t

D(on)

⎯

13.7

⎯

ns

V

DD

= -10V, V

GS

= -4.5V,

R

G

= 6Ω, R

L

= 10Ω, I

D

= -1A

Turn-On Rise Time

t

r

⎯

14.0

⎯

Turn-Off Delay Time

t

D(off)

⎯

79.1

⎯

Turn-Off Fall Time

t

f

⎯

35.5

⎯

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
















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