Diodes DMP2070UCB6 - Manual (Page 4)

DMP2070UCB6
Document number: DS35553 Rev. 2 - 2
4 of 6
www.diodes.com
October 2011
© Diodes Incorporated
DMP2070UCB6
NEW PROD
UC
T
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
A
-V
,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
L
T
A
G
E(
V)
GS
(T
H
)
0.4 0.6 0.8 1.0 1.2
-V , SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
SD
0
2
4
6
8
10
-I
, S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
0 5 10 15 20
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
DS
10
100
1,000
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
AN
C
E (
p
F
)
T
C
oss
C
rss
C
iss
0.001
0.01
0.1
1
10
100
1,000
0 2 4 6 8 10 12
-V , DRAIN-SOURCE VOLTAGE(V)
Fig. 10 Typical Drain-Source Leakage Current vs. Voltage
DS
-I
, L
EAKA
G
E
C
U
R
R
EN
T
(n
A
)
DS
S
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
0
2
4
6
8
0 1 2 3 4 5
f = 1MHz
Q , TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
g
-V
,
G
A
T
E-
S
O
U
R
C
E V
O
L
T
A
G
E (
V)
GS
0.01 0.1 1 10 100
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 12 SOA, Safe Operation Area
DS
0.01
0.1
1
10
100
-I
, D
R
AI
N
C
U
R
R
EN
T
(A)
D
R
Limited
DS(on)
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 10µs
W