Diodes DMP2100U - Manual (Page 4)

DMP2100U
Document number: DS35718 Rev. 6 - 2
4 of 6
www.diodes.com
April 2013
© Diodes Incorporated
DMP2100U
0
0.3
0.6
0.9
1.2
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
V
, G
A
TE
T
H
RESHO
L
D VO
LT
A
G
E
(
V
)
GS
(T
H
)
I = 250µA
D
I = 1mA
D
0
2
4
6
8
10
12
14
16
18
20
0.2 0.4 0.6 0.8 1 1.2
Fig. 8 Diode Forward Voltage vs. Current
V , SOURCE-DRAIN VOLTAGE (V)
SD
I,
S
O
U
R
C
E
C
U
R
R
E
N
T
(A
)
S
T = 25°C
A
1,000
0 5 10 15 20
100
10
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
DS
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
A
N
C
E (
p
F
)
T
C
oss
C
rss
f = 1MHz
C
iss
0.5
1.5
2.5
3.5
4.5
0 1 2 3 4 5 6 7 8 9 10
0
1.0
2.0
3.0
4.0
5.0
Q , TOTAL GATE CHARGE (nC)
Fig. 10 Gate-Charge Characteristics
g
-V
,
G
A
T
E-
S
O
U
R
C
E V
O
LT
A
G
E (
V
)
GS
V = -10V
I = -4A
DS
D
0.00001 0.001 0.01 0.1 1 10 100 1,000
Fig. 11 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.0001
T - T = P * R (t)
Duty Cycle, D = t /t
J A JA
1 2

R (t) = r(t) * JA R
R = 171°C/W


JA
JA
P(pk)
t
1
t
2
0.001
0.01
0.1
1
r(
t),
T
R
AN
S
IE
N
T
T
H
E
R
MA
L
R
ES
IS
TAN
C
E
D = 0.7
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.5