Diodes DMP2104LP - Manual

DMP2104LP
Document number: DS31091 Rev. 6 - 2
1 of 4
www.diodes.com
November 2007
© Diodes Incorporated
DMP2104LP
NEW PROD
UC
T
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
• P-Channel MOSFET
• Very Low On-Resistance
• Very Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Lead Free By Design/RoHS Compliant (Note 2)
• "Green" Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: DFN1411-3
• Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Finish - NiPdAu over Copper lead frame.
Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.003 grams (approximate)
DFN1411-3
D
S
G
TOP VIEW
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Internal Schematic
TOP VIEW BOTTOM VIEW
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
-20 V
Gate-Source Voltage V
GSS
±12 V
Continuous Drain Current (Note 1)
T
A
= 25°C
T
A
= 70°C
I
D
-1.5
-1.2
A
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Power Dissipation (Note 1) P
D
500 mW
Thermal Resistance, Junction to Ambient (Note 1) R
θJA
250 °C/W
Operating and Storage Temperature Range T
j,
T
STG
-55 to +150 °C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
BV
DSS
-20 ⎯ ⎯ V V
GS
= 0V, I
D
= -250 μA
Zero Gate Voltage Drain Current T
J
= 25 °C
T
J
= 125 °C
I
DSS
⎯ ⎯
-1.0
-5.0
μA V
DS
= -20V, V
GS
= 0V
Gate-Source Leakage I
GSS
⎯ ⎯ ±100 nA V
GS
= ±12V, V
DS
= 0V
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
V
GS(th)
-0.45 ⎯ -1.0 V V
DS
= V
GS
, I
D
= -250 μA
V
GS
= -4.5V, I
D
= -950mA
V
GS
= -2.5V, I
D
= -670mA Static Drain-Source On-Resistance R
DS (ON)
⎯
92
134
180
150
200
240
m Ω
V
GS
= -1.8V, I
D
= -200mA
Forward Transconductance g
FS
⎯ 3.1 ⎯ S V
DS
= -10V, I
D
= -810mA
Diode Forward Voltage (Note 4) V
SD
⎯ ⎯ -0.9 V V
GS
= 0V, I
S
= -360mA
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
⎯ 320 ⎯ pF
Output Capacitance C
oss
⎯ 80 ⎯ pF
Reverse Transfer Capacitance C
rss
⎯ 60 ⎯ pF
V
DS
= -16V, V
GS
= 0V
f = 1.0MHz
Notes: 1. Device mounted on FR-4 PCB with 1 inch square pads.
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Short duration pulse test used to minimize self-heating effect.