Diodes DMP210DUFB4 - Manual (Page 4)

DMP210DUFB4
Document number: DS35026 Rev. 6 - 2
4 of 6
www.diodes.com
November 2013
© Diodes Incorporated
DMP210DUFB4
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-50 -25 0 25 50 75 100 125 150
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
(t
h
)
T , JUNCTION TEMPERATURE ( C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
J

I = 250 A
D

I = 1mA
D
0
0.2
0.3
0.4
0.5
I,
S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
0 0.2 0.4 0.6 0.8 1 1.2
0.1
V , SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
SD
0.6
T = 25 C
A

1
10
100
0 4 8 12 16 20
f = 1MHz
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
DS
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
AN
C
E (
pF
)
T
C
iss
C
oss
C
rss
0.1
1
10
100
1,000
10,000
0 2 4 6 8 10 12 14 16 18 20
V , DRAIN-SOURCE VOLTAGE(V)
Fig. 10 Typical Drain-Source Leakage Current vs. Voltage
DS
I
, L
E
AKA
G
E
C
U
R
R
EN
T
(n
A
)
DS
S
T =
A
-55 C 
T =
A
25 C 
T =
A
85 C 
T = 150 C
A

0.001 0.01 0.1 1 10 100 1,000
Fig. 11 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.00001 0.0001
0.001
0.01
0.1
1
r(t),
T
R
ANSI
EN
T
T
H
E
R
MA
L
R
ES
IS
TAN
C
E
T - T = P * R (t)
Duty Cycle, D = t /t
J A JA
1 2

R (t) = r(t) * JA R
R = 369°C/W


JA
JA
P(pk)
t
1
t
2
D = 0.7
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.5