Diodes DMP2160UW - Manual (Page 3)

DMP2160UW
Document number: DS31521 Rev. 5 - 2
3 of 5
www.diodes.com
February 2013
© Diodes Incorporated
NEW PROD
UC
T
DMP2160UW
0
2
4
6
8
10
0 1 2 3 4 5
Fig. 1 Typical Output Characteristics
V , DRAIN-SOURCE VOLTAGE (V)
DS
I,
D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
V = 1.5V
GS
V = 2.0V
GS
V = 2.5V
GS
V = 3.0V
GS
V = 3.0V
GS
V = 3.0V
GS
0
2
4
6
8
10
0 0.5 1 1.5 2 2.5 3
Fig. 2 Typical Transfer Characteristics
-V , GATE SOURCE VOLTAGE (V)
GS
-I
, D
R
AI
N
C
U
R
R
EN
T
(A
)
D
V = -5V
DS
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
T = 125°C
A
0.6
0.8
1.0
1.2
1.4
1.6
R
, D
R
AI
N
-S
O
U
R
C
E
ON-
R
ESIS
TA
NCE (
N
OR
M
A
LI
Z
E
D)
DS
(O
N)
Fig. 3 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
V = -4.5V
I = -4.5A
GS
D
V = -2.5V
I = -2A
GS
D
0
200
400
600
800
1,000
1,200
0 4 8 12 16 20
Fig. 4 Typical Capacitance
V , DRAIN-SOURCE VOLTAGE (V)
DS
C
, C
A
P
A
C
IT
AN
C
E (
pF
)
f = 1MHz
V = 0V
GS
C
iss
C
oss
C
rss
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
Fig. 5 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
-V
, G
A
TE T
H
R
ESHO
L
D VO
LT
AG
E
(V
)
GS
(T
H
)
I = 250µA
D
I = 1mA
D
0
2
4
6
8
10
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
-V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 6 Diode Forward Voltage vs. Current
-I
, S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
T = 25°C
A