Diodes DMP21D0UFB - Manual (Page 5)

DMP21D0UFB
D atasheet Number: DS35277 Rev. 3 - 2
5 of 7
www.diodes.com
February 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMP21D0UFB
1
10
100
1,000
10,000
0 4 8 12 16 20
-I
, L
E
A
K
A
G
E
C
U
R
R
EN
T
(n
A
)
DS
S
Fig. 11 Typical Leakage Current vs. Drain-Source Voltage
-V , DRAIN-SOURCE VOLTAGE (V)
DS
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0 2 4 6 8
V , GATE-SOURCE VOLTAGE (V)
GS
Fig.12 Leakage Current vs. Gate-Source Voltage
0.1
1
10
100
1,000
10,000
100,000
I
, L
EAK
A
G
E
C
U
R
R
E
N
T
(n
A
)
GS
S
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
T = -55°C
A
0.1
1
10
100
1,000
10,000
100,000
0 2 4 6 8
V , GATE-SOURCE VOLTAGE (V)
GS
Fig.13 Leakage Current vs. Gate-Source Voltage
I,
L
E
A
K
A
G
E
C
U
R
R
E
N
T
(n
A
)
GS
S
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
T = -55°C
A
1,000
100
10
1
0
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 14 Typical Junction Capacitance
DS
2 4 6 8 10 12 14 16 18 20
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
AN
C
E (
p
F
)
T
C
oss
C
rss
f = 1MHz
C
iss
0
1
2
3
4
5
6
7
8
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Q , TOTAL GATE CHARGE (nC)
Fig. 15 Gate-Charge Characteristics
g
-V
,
G
A
T
E-
S
O
U
R
C
E V
O
L
T
A
G
E (
V
)
GS