Diodes DMP21D5UFD - Manual (Page 2)

DMP21D5UFD
Document number: DS35931 Rev. 4 - 2
2 of 6
www.diodes.com
August 2012
© Diodes Incorporated
DMP21D5UFD
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
-20 V
Gate-Source Voltage V GSS
±8 V
Continuous Drain Current (Note 6) V
GS
= -4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-600
-500
mA
Continuous Drain Current (Note 6) V
GS
= -1.8V
Steady
State
T
A
= +25°C
T A = +70°C
I
D
-400
-300
mA
Pulsed Drain Current (10 μs pulse, duty cycle = 1%) I
DM
-2 A
Maximum Body Diode continuous Current I
S
-800 mA
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) P
D
0.4 W
Thermal Resistance, Junction to Ambient (Note 5) Steady state R θJA 280 °C/W
Total Power Dissipation (Note 6) P
D
0.8 W
Thermal Resistance, Junction to Ambient (Note 6) Steady state R θJA 140 °C/W
Operating and Storage Temperature Range T
J, T STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV DSS
-20 — — V V GS = 0V, I D = -1mA
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
— —
-80
-100
nA
V
DS
= -4.5V, V
GS
= 0V
V
DS
= -20V, V
GS
= 0V
Gate-Source Leakage I
GSS
— — ±10.0 µA V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
-0.5 — -1.0 V V
DS
= V
GS
, I
D
= -250 μA
Static Drain-Source On-Resistance R
DS (ON)
— 0.7 1.0
Ω
V
GS
= -4.5V, I
D
= -100mA
— 0.9 1.5 V GS = -2.5V, I D = -80mA
— 1.2 2.0 V
GS
= -1.8V, I
D
= -40mA
— 1.5 3.0 V
GS
= -1.5V, I
D
= -30mA
— 5 — V GS = -1.2V, I D = -1mA
Forward Transfer Admittance |Y
fs
| — 0.7 — S V
DS
= -3V, I
D
= -100mA
Diode Forward Voltage V
SD
— -0.75 -1.2 V V
GS
= 0V, I
S
= -330mA,
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
— 46.1 —
pF
V
DS
= -10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
— 7.2 —
Reverse Transfer Capacitance C rss
— 4.9 —
Total Gate Charge V
GS
= -4.5V Q
g
— 0.5 —
nC V
DS
= -10V, I
D
= -250mA
Total Gate Charge V
GS
= -8V Q
g
— 0.8 —
Gate-Source Charge Q gs
— 0.1 —
Gate-Drain Charge Q
gd
— 0.1 —
Turn-On Delay Time t
D(on)
— 8.5 —
ns
V
DD
= -3V, V
GS
= -2.5V,
R
L
= 300 Ω, R
G
= 25 Ω,
I
D
= -100mA
Turn-On Rise Time t
r
— 4.3 —
Turn-Off Delay Time t
D(off)
— 20.2 —
Turn-Off Fall Time t
f
— 19.2 —
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.