Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DMP2225L User Manual

Page 2: Dmp2225l

Advertising
background image

DMP2225L

Document number: DS31461 Rev. 5 - 2

2 of 6

www.diodes.com

January 2013

© Diodes Incorporated

DMP2225L






Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Value

Units

Drain-Source Voltage

V

DSS

-20 V

Gate-Source Voltage

V

GSS

±12 V

Continuous Drain Current (Note 5)

Stead

State

T

A

= +25°C

T

A

= +70°C

I

D

-2.6

-2

A

Pulsed Drain Current (Note 6)

I

DM

8 A


Thermal Characteristics

Characteristic Symbol

Value

Units

Total Power Dissipation (Note 5)

P

D

1.08 W

Thermal Resistance, Junction to Ambient @T

A

= +25°C (Note 5)

R

θJA

115 °C/W

Operating and Storage Temperature Range

T

J,

T

STG

-55 to +150

°C


Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Min

Typ

Max

Unit

Test

Condition

OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage

BV

DSS

-20 — — V

V

GS

= 0V, I

D

= -250µA

Zero Gate Voltage Drain Current

I

DSS

— — -800

nA

V

DS

= -20V, V

GS

= 0V

On-State Drain Current

I

D(ON)

-6 — —

A

V

DS

-5V, V

GS

= -4.5V

-3 — —

V

DS

-5V, V

GS

= -2.5V

Gate-Source Leakage

I

GSS

— — ±80

nA

V

GS

= ±12V, V

DS

= 0V

ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

V

GS(th)

-0.45 — -1.25

V

V

DS

= V

GS

, I

D

= -250µA

Static Drain-Source On-Resistance

R

DS (ON)

80

165

110
225

mΩ

V

GS

= -4.5V, I

D

= -2.6A

V

GS

= -2.5V, I

D

= -2.0A

Forward Transfer Admittance

|Y

fs

|

— 4 —

S

V

DS

= -5V, I

D

= -2.6A

Diode Forward Voltage (Note 6)

V

SD

— —

-1.26

V

V

GS

= 0V, I

S

= -2.6A

DYNAMIC CHARACTERISTICS
Input Capacitance

C

iss

— 250 — pF

V

DS

= -10V, V

GS

= 0V

f = 1.0MHz

Output Capacitance

C

oss

— 88 —

pF

Reverse Transfer Capacitance

C

rss

— 58 —

pF

Gate Resistance

R

g

— 12 16

V

GS

= 0V, V

DS

= 0V, f = 1MHz

Total Gate Charge

Q

g

— 4.3 5.3

nC

V

GS

= -4.5V, V

DS

= -10V,

I

D

= -2.7A

Gate-Source Charge

Q

gs

— 0.9 —

Gate-Drain Charge

Q

gd

— 2.1 —

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.



















Advertising