Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DMP2200UFCL User Manual

Page 2

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DMP2200UFCL

Document number: DS36619 Rev. 2 - 2

2 of 6

www.diodes.com

June 2014

© Diodes Incorporated

DMP2200UFCL

ADVAN

CE I

N

F

O

RM

ATI

O

N

NEW PROD

UC

T


Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Value

Units

Drain-Source Voltage

V

DSS

-20 V

Gate-Source Voltage

V

GSS

±8 V

Continuous Drain Current (Note 6)

@T

A

= +25°C

@T

A

= +85°C

I

D

-1.7
-1.2

A



Thermal Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Value

Units

Total Power Dissipation

(Note 5)

P

D

0.66 W

(Note 6)

1.58

W

Thermal Resistance, Junction to Ambient

(Note 5)

R

θJA

193

°C/W

(Note 6)

80

Operating and Storage Temperature Range

T

J,

T

STG

-55 to +150

°C



Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Min

Typ

Max

Unit

Test

Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BV

DSS

-20

V

V

GS

= 0V, I

D

= 250µA

Zero Gate Voltage Drain Current

I

DSS

-1 µA

V

DS

= -20V, V

GS

= 0V

Gate-Body Leakage

I

GSS

±10

µA

V

GS

=

±8V, V

DS

= 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

V

GS(th)

-0.4

-1.2 V

V

DS

= V

GS

, I

D

= -250µA

Static Drain-Source On-Resistance

R

DS (ON)

153
220
260
360

200
290
390
650

m

Ω

V

GS

= -4.5V, I

D

= -2.0A

V

GS

= -2.5V, I

D

= -1.2A

V

GS

= -1.8V, I

D

= -0.24A

V

GS

= -1.5V, I

D

= -0.18A

Diode Forward Voltage (Note 7)

V

SD

-1.2 V

V

GS

= 0V, I

S

= -0.6A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

C

iss

— 184 —

pF

V

DS

= -10V, V

GS

= 0V

f

= 1.0MHz

Output Capacitance

C

oss

25.8

pF

Reverse Transfer Capacitance

C

rss

18.6

pF

Total Gate Charge

Q

g

2.2 —

nC

V

GS

= -4.5V, V

DS

= -10V,

I

D

= -1.7A

Gate-Source Charge

Q

gs

0.4

nC

Gate-Drain Charge

Q

gd

0.5

nC

SWITCHING CHARACTERISTICS (Note 8)

Turn-On Delay Time

t

D(ON)

9.8 —

ns

V

DD

= -10V, I

D

= -1.5A,

V

GS

= -4.5V, R

GEN

= 1

Ω

Turn-Off Delay Time

t

D(OFF)

23

ns

Turn-On Rise Time

t

r

87

ns

Turn-Off Fall Time

t

f

41 —

ns

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.








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