Dmp2305u new prod uc t, Maximum ratings, Thermal characteristics – Diodes DMP2305U User Manual

Page 2: Electrical characteristics, Dmp2305u

Advertising
background image

DMP2305U

Document number: DS31737 Rev. 6 - 2

2 of 6

www.diodes.com

October 2013

© Diodes Incorporated

DMP2305U

NEW PROD

UC

T




Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Value

Units

Drain-Source Voltage

V

DSS

-20 V

Gate-Source Voltage

V

GSS

±8 V

Continuous Drain Current (Note 6)

Steady

State

T

A

= +25°C

T

A

= +70°C

I

D

-4.2
-3.4

A

Pulsed Drain Current (Note 7)

I

DM

-10 A




Thermal Characteristics

Characteristic Symbol

Value

Unit

Power Dissipation (Note 6)

P

D

1.4 W

Thermal Resistance, Junction to Ambient @T

A

= 25°C

R

θJA

90 °C/W

Operating and Storage Temperature Range

T

J,

T

STG

-55 to +150

°C




Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Min

Typ

Max

Unit

Test

Condition

OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage

BV

DSS

-20

V

V

GS

= 0V, I

D

= -250μA

Zero Gate Voltage Drain Current T

J

= +25°C

I

DSS

-1.0

μA

V

DS

= -20V, V

GS

= 0V

Gate-Source Leakage

I

GSS

±100 nA

V

GS

=

8V, V

DS

= 0V

ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage

V

GS(th)

-0.5 - -0.9 V

V

DS

= V

GS

, I

D

= -250μA

Static Drain-Source On-Resistance

R

DS (ON)

45 60

mΩ

V

GS

= -4.5V, I

D

= -4.2A

60 90

V

GS

= -2.5V, I

D

= -3.4A

87 113

V

GS

= -1.8V, I

D

= -2.0A

Forward Transfer Admittance

|Y

fs

|

9

S

V

DS

= -5V, I

D

= -4A

DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance

C

iss

727

pF

V

DS

= -20V, V

GS

= 0V

f = 1.0MHz

Output Capacitance

C

oss

69

pF

Reverse Transfer Capacitance

C

rss

64

pF

Gate Resistance

R

G

23

V

GS

= 0V, V

DS

= 0V, f = 1.0MHz

SWITCHING CHARACTERISTICS
Total Gate Charge

Q

g

7.6

nC

V

GS

= -4.5V, V

DS

= -4V, I

D

= -3.5A

Gate-Source Charge

Q

gs

1.4

nC

Gate-Drain Charge

Q

gd

1.2

nC

Turn-On Delay Time

t

D(on)

14.0

ns

V

DS

= -4V, V

GS

= -4.5V,

R

L

= 4Ω, R

G

= 6Ω, I

D

= -1A

Turn-On Rise Time

t

r

13.0

ns

Turn-Off Delay Time

t

D(off)

53.8

ns

Turn-Off Fall Time

t

f

23.2

ns

Notes:

6. Device mounted on FR-4 PCB with 2oz. Copper and test pulse width t ≤ 10s.

7. Repetitive rating, pulse width limited by junction temperature.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to production testing.














Advertising