Diodes DMP2305UVT - Manual (Page 4)

DMP2305UVT
Document number: DS35986 Rev. 1 - 2
4 of 8
www.diodes.com
August 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMP2305UVT
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-20 ⎯ ⎯ V V
GS
= 0V, I
D
= -250
μA
Zero Gate Voltage Drain Current I
DSS
⎯ ⎯ -1 µA V
DS
= -20V, V
GS
= 0V
Gate-Source Leakage I GSS
⎯ ⎯ ±100 nA V GS =
±8V, V
DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
-0.5 ⎯ -0.9 V V
DS
= V
GS
, I
D
= -250 μA
Static Drain-Source On-Resistance R
DS (ON)
⎯ 45 60
m
Ω
V
GS
= -4.5V, I
D
= -4.2A
⎯ 60 90 V
GS
= -2.5V, I
D
= -3.4A
⎯ 87 113 V
GS
= -1.8V, I
D
= -2.0A
Forward Transfer Admittance |Y fs |
⎯ 9 ⎯ S V DS = -5V, I D = -4A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
⎯ 727 ⎯
pF
V DS = -20V, V GS = 0V
f = 1.0MHz
Output Capacitance C
oss
⎯ 69 ⎯
Reverse Transfer Capacitance C
rss
⎯ 64 ⎯
Gate Resistance R
G
⎯ 23
⎯ Ω V
GS
= 0V, V
DS
= 0V, f = 1.0MHz
Total Gate Charge Q g
⎯ 7.6 ⎯
nC V
GS
= -4.5V, V
DS
= -4V, I
D
= -3.5A Gate-Source Charge Q
gs
⎯ 1.4 ⎯
Gate-Drain Charge Q
gd
⎯ 1.2 ⎯
Turn-On Delay Time t D(on)
⎯ 14.0
⎯
ns
V
DS
= -4V, V
GS
= -4.5V,
R L = 4
Ω, R
G = 6
Ω, I
D = -1A
Turn-On Rise Time t
r
⎯ 13.0 ⎯
Turn-Off Delay Time t
D(off)
⎯ 53.8
⎯
Turn-Off Fall Time t
f
⎯ 23.2
⎯
Notes: 7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.