Dmg4413lss new prod uc t, Maximum ratings, Thermal characteristics – Diodes DMG4413LSS User Manual
Page 2: Electrical characteristics, Dmg4413lss
DMG4413LSS
Document number: DS31754 Rev. 5 - 2
2 of 5
September 2013
© Diodes Incorporated
DMG4413LSS
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Drain-Source Voltage
V
DSS
-30 V
Gate-Source Voltage
V
GSS
±20 V
Continuous Drain Current (Note 6) V
GS
= -10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-12
-10
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
-22
-17
A
Continuous Drain Current (Note 6) V
GS
= -4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-10
-8
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
-18
-14
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
I
DM
-100 A
Maximum Body Diode continuous Current
I
S
-4 A
Thermal Characteristics
Characteristic Symbol
Value
Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
1.7
W
T
A
= +70°C
1.1
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
R
θJA
74
°C/W
t<10s 22
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
2.2
W
T
A
= +70°C
1.4
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
R
θJA
56
°C/W
t<10s 17
Thermal Resistance, Junction to Case (Note 6)
Steady State
R
θJC
2.5
Operating and Storage Temperature Range
T
J,
T
STG
-55 to 150
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-30
V
V
GS
= 0V, I
D
= -250µA
Zero Gate Voltage Drain Current
I
DSS
-1
A
V
DS
= -30V, V
GS
= 0V
Gate-Source Leakage
I
GSS
1
A
V
GS
=
20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
-1.1 1.6 -2.1 V
V
DS
= V
GS
, I
D
= -250
A
Static Drain-Source On-Resistance
R
DS(ON)
6.3
7.9
7.5
10.2
m
V
GS
= -10V, I
D
= -13A
V
GS
= -4.5V, I
D
= -10A
Forward Transconductance
g
fs
26
S
V
DS
= -15V, I
D
= -13A
Diode Forward Voltage
V
SD
-0.7 -1.0 V
V
GS
= 0V, I
S
= -2.7A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
4965
pF
V
DS
= -15V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
1487
pF
Reverse Transfer Capacitance
C
rss
711
pF
Gate Resistance
R
G
7.3
V
DS
= 0V, V
GS
= 0V
f = 1.0MHz
SWITCHING CHARACTERISTICS (Note 8)
Total Gate Charge
Q
G
46
nC
V
DS
= -15V, V
GS
= -5V
I
D
= -13A
Gate-Source Charge
Q
GS
17
Gate-Drain Charge
Q
GD
16
Turn-On Delay Time
t
d(on)
15
ns
V
DS
= -15V, V
GS
= -10V,
I
D
= -1A, R
G
= 6.0
Rise Time
t
r
9
Turn-Off Delay Time
t
d(off)
160
Fall Time
t
f
66
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.