Diodes DMG4435SSS User Manual

Ds g, Dmg4435sss new prod uc t, Product summary

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DMG4435SSS

Document number: DS32041 Rev. 5 - 2

1 of 6

www.diodes.com

September 2013

© Diodes Incorporated

DMG4435SSS

NEW PROD

UC

T

P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

V

(BR)DSS

R

DS(on) max

I

D

T

A

= +25°C

-30V

16m

 @ V

GS

= -20V

-7.3A

20m

 @ V

GS

= -10V

-6.0A

Description

This new generation MOSFET has been designed to minimize the on-
state resistance (R

DS(ON)

) and yet maintain superior switching

performance, making it ideal for high efficiency power management
applications.

Applications

 DC-DC

Converters

Power management functions

 Backlighting

Features

 Low

On-Resistance

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case:

SO-8

Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

 Terminal

Connections

Indicator: See diagram

 Terminals:

Finish

 Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

Weight: 0.074 grams (approximate)















Ordering Information

(Note 4)

Part Number

Case

Packaging

DMG4435SSS-13

SO-8

2500 / Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.


Marking Information
















Top View

Top View

Internal Schematic

SO-8

D

S

D

D

D

S

S

G

D

S

G

Equivalent circuit

Chengdu A/T Site

Shanghai A/T Site

= Manufacturer’s Marking
G4435SS = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)

1

4

8

5

G4435SS

WW

YY

1

4

8

5

G4435SS

WW

YY

e3

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