Electrical characteristics, Dmp3017sfg – Diodes DMP3017SFG User Manual

Page 3

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POWERDI is a registered trademark of Diodes Incorporated

DMP3017SFG

Document number: DS36479 Rev. 3 - 2

3 of 7

www.diodes.com

December 2013

© Diodes Incorporated

DMP3017SFG

ADVAN

CE I

N

F

O

RM

ATI

O

N



Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage

BV

DSS

-30

— V

V

GS

= 0V, I

D

= -250μA

Zero Gate Voltage Drain Current

I

DSS

-1

μA

V

DS

= -24V, V

GS

= 0V

Gate-Source Leakage

I

GSS

±10

μA

V

GS

= ±25V, V

DS

= 0V

ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage

V

GS(th)

-1.0 — -3.0 V

V

DS

= V

GS

, I

D

= -250μA

Static Drain-Source On-Resistance

R

DS (ON)

8.5 10

mΩ

V

GS

= -10V, I

D

= -11.5A

15 18

V

GS

= -4.5V, I

D

= -8.5A

Forward Transfer Admittance

|Y

fs

|

24 — S

V

DS

= -5V, I

D

= -11.5A

DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance

C

iss

2246 — pF

V

DS

= -15V, V

GS

= 0V,

f = 1.0MHz

Output Capacitance

C

oss

352 — pF

Reverse Transfer Capacitance

C

rss

294 — pF

Gate resistance

R

g

5.1 12 Ω

V

DS

= 0V, V

GS

= 0V, f = 1.0MHz

Total Gate Charge (V

GS

= 5V)

Q

g

20.5 — nC

V

DS

= -15V, I

D

= -11.5A

Total Gate Charge (V

GS

= 10V)

Q

g

41 — nC

Gate-Source Charge

Q

gs

7.6 — nC

Gate-Drain Charge

Q

gd

8.0 — nC

Turn-On Delay Time

t

D(on)

7.5 — ns

V

DD

= -15V, V

GS

= -10V,

R

G

= 6Ω, I

D

= -11.5A

Turn-On Rise Time

t

r

15.4 — ns

Turn-Off Delay Time

t

D(off)

45.6 — ns

Turn-Off Fall Time

t

f

36.8 — ns

BODY DIODE CHARACTERISTICS
Diode Forward Voltage

V

SD

-0.7 — V

V

GS

= 0V, I

S

= -1A

Reverse Recovery Time (Note 9)

t

rr

20 — ns

I

S

= -11.5A, dI/dt = 100A/μs

Reverse Recovery Charge (Note 9)

Q

rr

9.5 — nC

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I

AR

and E

AR

rating are based on low frequency and duty cycles to keep T

J

= +25°C

8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.



-V , DRAIN -SOURCE VOLTAGE (V)

Figure 1 Typical Output Characteristics

DS

-I

, D

R

AI

N

C

U

R

R

EN

T

(A

)

D

0.0

5.0

10.0

15.0

20.0

25.0

30.0

0

1

2

3

4

5

V

= -2.5V

GS

V

= -3.0V

GS

V

= -3.5V

GS

V

= -4.0V

GS

V

= -10V

GS

V

= -5.5V

GS

V

= -5.5V

GS

-V , GATE-SOURCE VOLTAGE (V)

GS

Figure 2 Typical Transfer Characteristics

-I

, D

R

AI

N

C

U

R

R

ENT (

A

)

D

0

5

10

15

20

25

30

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

V

= -5.0V

DS

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