Diodes DMP3028LFDE - Manual (Page 2)

DMP3028LFDE
Document number: DS35965 Rev. 5 - 2
2 of 6
www.diodes.com
March 2013
© Diodes Incorporated
DMP3028LFDE
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
-30 V
Gate-Source Voltage V
GSS
±20 V
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-6.8
-5.3
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
-8.2
-6.6
A
Maximum Body Diode Forward Current (Note 6) I
S
-2.5 A
Pulsed Drain Current (10 s pulse, duty cycle = 1%) I
DM
-40 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
0.66
W
T
A
= +70°C 0.42
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R
JA
189
°C/W
t<10s 125
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
2.03
W
T
A
= +70°C 1.3
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
JA
61
°C/W t<10s 41
Thermal Resistance, Junction to Case (Note 6) R
JC
9.3
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-30   V V
GS
= 0V, I
D
= -250 A
Zero Gate Voltage Drain Current I
DSS
  -1 A V
DS
= -30V, V
GS
= 0V
Gate-Source Leakage I
GSS
  100 nA V
GS
= 20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
-1  -2.4 V V
DS
= V
GS
, I
D
= -250 A
Static Drain-Source On-Resistance R
DS (ON)
 20 25
m 
V
GS
= -10V, I
D
= -7A
 29 38 V
GS
= -4.5V, I
D
= -6.2A
Forward Transfer Admittance |Y
fs
|  4.5  S V
DS
= -5V, I
D
= -7A
Diode Forward Voltage V
SD
 0.7 1.2 V V
GS
= 0V, I
S
= -2.1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
 1241 
pF
V
DS
= -15V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
 147 
Reverse Transfer Capacitance C
rss
 110 
Gate Resistance R
G
 15   V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= 10V) Q
g
 22 
nC  V
DS
= -15V, I
D
= -7A
Total Gate Charge (V
GS
= 4.5V) Q
g
 10.9 
Gate-Source Charge Q
gs
 3.5 
Gate-Drain Charge Q
gd
 4.7 
Turn-On Delay Time t
D(on)
 9.7 
nS
V
GS
= -10V, V
DD
= -15V, R
GEN
= 6 ,
I
D
= -7A
Turn-On Rise Time t
r
 17.1 
Turn-Off Delay Time t
D(off)
 60.5 
Turn-Off Fall Time t
f
 40.4 
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.