Diodes DMP3028LSD - Manual (Page 2)

DMP3028LSD
Document number: DS35966 Rev. 3 - 2
2 of 6
www.diodes.com
June 2013
© Diodes Incorporated
DMP3028LSD
ADVAN
C
E
D
I
NF
OR
M
A
T
IO
N
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
-30 V
Gate-Source Voltage V
GSS
±20 V
Continuous Drain Current (Note 5) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-6
-4.7
A
t<10s
T
A
= +25°C
T A = +70°C
I D
-7.4
-5.8
A
Maximum Body Diode Forward Current (Note 6) I
S
-2.5 A
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) I
DM
-30 A
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
1.3
W
T A = +70°C 0.8
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R ΘJA
102
°C/W
t<10s 61
Total Power Dissipation (Note 6)
T
A
= +25°C
P D
1.7
W
T
A
= +70°C 1.1
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R ΘJA
75
°C/W t<10s 50
Thermal Resistance, Junction to Case (Note 6) R ΘJC 14.5
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T A = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-30 — — V V
GS
= 0V, I
D
= -250µA
Zero Gate Voltage Drain Current I
DSS
— — -1 µA V
DS
= -30V, V
GS
= 0V
Gate-Source Leakage I GSS
— — ±100 nA V GS =±20V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
-1 — -3 V V
DS
= V
GS
, I
D
= -250µA
Static Drain-Source On-Resistance R
DS(ON)
— 20 25
m
Ω
V GS = -10V, I D = -7A
— 29 38 V
GS
= -4.5V, I
D
= -5.5A
Forward Transfer Admittance |Y
fs
| — 11 — S V
DS
= -5V, I
D
= -7A
Diode Forward Voltage V SD
— 0.7 1.2 V V GS = 0V, I S = -2.1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
— 1241 —
pF
V DS = -15V, V GS = 0V
f = 1.0MHz
Output Capacitance C oss
— 147 —
Reverse Transfer Capacitance C
rss
— 110 —
Gate Resistance R
G
— 15 — Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= -4.5V) Q
g
— 22 —
nC V
DS
= -15V, I
D
= -7A
Total Gate Charge (V
GS
= -10V) Q
g
— 10.9 —
Gate-Source Charge Q
gs
— 3.5 —
Gate-Drain Charge Q
gd
— 4.7 —
Turn-On Delay Time t D(on)
— 9.7 —
nS
V GS = -10V, V DD = -15V, R GEN = 6
Ω,
I
D
= -7A
Turn-On Rise Time t
r
— 17.1 —
Turn-Off Delay Time t
D(off)
— 60.5 —
Turn-Off Fall Time t f
— 40.4 —
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.