Dmp3056lsd new prod uc t, Maximum ratings, Thermal characteristics – Diodes DMP3056LSD User Manual

Page 2: Electrical characteristics, Dmp3056lsd

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DMP3056LSD

Document number: DS31420 Rev. 7 - 2

2 of 5

www.diodes.com

January 2014

© Diodes Incorporated

DMP3056LSD

NEW PROD

UC

T


Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Value

Units

Drain-Source Voltage

V

DSS

-30 V

Gate-Source Voltage

V

GSS

±20

V

Drain Current (Note 5) Steady
State

T

A

= +25°C

T

A

= +70°C

I

D

-6.9
-5.8

A

Pulsed Drain Current (Note 6)

I

DM

-24 A


Thermal Characteristics

Characteristic Symbol

Value

Unit

Total Power Dissipation (Note 5)

P

D

2.5 W

Thermal Resistance, Junction to Ambient (Note 5)

R

θJA

50 °C/W

Operating and Storage Temperature Range

T

J,

T

STG

-55 to +150

°C


Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Min

Typ

Max

Unit

Test

Condition

OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage

BV

DSS

-30

V

V

GS

= 0V, I

D

= -250µA

Zero Gate Voltage Drain Current

I

DSS

-1 µA

V

DS

= -30V, V

GS

= 0V

Gate-Source Leakage

I

GSS

±100
±800

nA

V

GS

=

±20V, V

DS

= 0V

V

GS

=

±25V, V

DS

= 0V

ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

V

GS(th)

-1 -1.7 -2.1 V

V

DS

= V

GS

, I

D

= -250

μA

Static Drain-Source On-Resistance

R

DS (ON)

45
65

m

Ω

V

GS

= -10V, I

D

= -6.0A

V

GS

= -4.5V, I

D

= -5.0A

Forward Transconductance

g

fs

8

S

V

DS

= -10V, I

D

= -5.3A

Diode Forward Voltage (Note 7)

V

SD

-0.5

-1.2 V

V

GS

= 0V, I

S

= -1.7A

DYNAMIC CHARACTERISTICS
Input Capacitance

C

iss

722

pF

V

DS

= -25V, V

GS

= 0V

f = 1.0MHz

Output Capacitance

C

oss

114

pF

Reverse Transfer Capacitance

C

rss

92

pF

Gate Resistance

R

G

3.3

Ω

V

DS

= 0V, V

GS

= 0V

f = 1.0MHz

SWITCHING CHARACTERISTICS

Total Gate Charge

Q

G

6.8

nC

V

DS

= -15V, V

GS

= -4.5V,

I

D

= -6A

Q

G

13.7

nC

V

DS

= -15V, V

GS

= -10V,

I

D

= -6A

Gate-Source Charge

Q

GS

1.6

Gate-Drain Charge

Q

GD

4.2

Turn-On Delay Time

t

d(on)

6.4

ns

V

DS

= -15V, V

GS

= -10V,

I

D

= -1A, R

G

= 6.0

Ω

Rise Time

t

r

5.3

Turn-Off Delay Time

t

d(off)

26.5

Fall Time

t

f

14.7

Notes:

5. Device mounted on 2 oz. 1” x 1” Copper pads on 2” x 2” FR-4 PCB.
6. Pulse

width

≤10μS, Duty Cycle ≤1%.

7. Short duration pulse test used to minimize self-heating effect.













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