Diodes DMP3065LVT - Manual (Page 2)

DMP3065LVT
Document number: DS36697 Rev. 2 - 2
2 of 6
www.diodes.com
February 2014
© Diodes Incorporated
DMP3065LVT
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings P-Channel
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
-30 V
Gate-Source Voltage V
GSS
±20 V
Continuous Drain Current (Note 5) V
GS
= -10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-4.9
-3.8
A
Continuous Drain Current (Note 5) V
GS
= -4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-3.7
-3.1
A
Maximum Body Diode continuous Current I
S
-2.0 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 6) P
D
1.2 W
Thermal Resistance, Junction to Ambient (Note 6) Steady state R
θJA
102 °C/W
Total Power Dissipation (Note 5) P
D
1.6 W
Thermal Resistance, Junction to Ambient (Note 5) Steady state R
θJA
78 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics P-Channel
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-30 — — V V
GS
= 0V, I
D
= -250μA
Zero Gate Voltage Drain Current @T
J
= +25°C I
DSS
— — -1 μA V
DS
= -24V, V
GS
= 0V
Gate-Source Leakage I
GSS
— — ±10 μA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
-1 -1.7 -2.1 V V
DS
= V
GS
, I
D
= -250μA
Static Drain-Source On-Resistance R
DS (ON)
— 34 42
mΩ
V
GS
= -10V, I
D
= -4.9A
— 52 65 V
GS
= -4.5V, I
D
= -3.7A
Forward Transfer Admittance |Y
fs
| — 8.5 — S V
DS
= -5V, I
D
= -4.9A
Diode Forward Voltage V
SD
— -0.75 -1.2 V V
GS
= 0V, I
S
= -1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
— 587 —
pF
V
DS
= -15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
— 160 —
Reverse Transfer Capacitance C
rss
— 84 —
Total Gate Charge (V
GS
= -4.5V) Q
g
— 6.3 —
nC V
DS
= -15V, I
D
= -4.9A
Total Gate Charge (V
GS
= -10V) Q
g
— 12.3 —
Gate-Source Charge Q
gs
— 1.9 —
Gate-Drain Charge Q
gd
— 2.5 —
Turn-On Delay Time t
D(on)
— 5.7 —
ns
V
DD
= -15V, V
GS
= -10V,
I
D
= -4.9A, R
G
= 6Ω
Turn-On Rise Time t
r
— 11.8 —
Turn-Off Delay Time t
D(off)
— 21.8 —
Turn-Off Fall Time t
f
— 23.9 —
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.