Diodes DMP3085LSD - Manual (Page 2)

DMP3085LSD
Document number: DS36194 Rev. 1 - 0
2 of 6
www.diodes.com
May 2013
© Diodes Incorporated
DMP3085LSD
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
-30 V
Gate-Source Voltage V
GSS
±20 V
Continuous Drain Current (Note 6) V
GS
= -10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-3.9
-3.1
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
-4.9
-3.9
A
Maximum Continuous Body Diode Forward Current (Note 6) I
S
-2.5 A
Pulsed Drain Current (10µs pulse, duty cycle = 1%) I
DM
20 A
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
1.1
W
T
A
= +70°C 0.7
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
R
θJA
107
°C/W
t<10s 70
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
1.7
W
T
A
= +70°C 1.1
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
R
θJA
75
°C/W t<10s 50
Thermal Resistance, Junction to Case R
θJC
14.5
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
-30 — — V V
GS
= 0V, I
D
= -250µA
Zero Gate Voltage Drain Current I
DSS
— — -1 µA V
DS
=-30V, V
GS
= 0V
Gate-Source Leakage I
GSS
— — ±100 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
-1 — -3 V V
DS
= V
GS
, I
D
= -250µA
Static Drain-Source On-Resistance R
DS (ON)
— 50 70
mΩ
V
GS
= -10V, I
D
= -5.3A
— 75 95 V
GS
= -4.5V, I
D
= -4.2A
Forward Transfer Admittance |Y
fs
| — 5.8 — S V
DS
= -5V, I
D
= -5.3A
Diode Forward Voltage V
SD
— -0.7 -1.2 V V
GS
= 0V, I
S
= -1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
— 563 —
pF V DS = -25V, V GS = 0V, f = 1.0MHz Output Capacitance C
oss
— 48 —
Reverse Transfer Capacitance C
rss
— 41 —
Gate Resistance R
G
— 10.3 — Ω V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= -4.5V) Q
g
— 5.2 —
nC V
DS
= -15V, I
D
= -3.8A
Total Gate Charge (V
GS
= -10V) Q
g
— 11 —
Gate-Source Charge Q
gs
— 1.7 —
Gate-Drain Charge Q
gd
— 1.9 —
Turn-On Delay Time t
D(on)
— 4.8 —
nS
V DS = -15V, V GS = -10V,
I D = -1A, R G = 6.0Ω
Turn-On Rise Time t
r
— 5 —
Turn-Off Delay Time t
D(off)
— 31 —
Turn-Off Fall Time t
f
— 14.6 —
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I
AR
and E
AR
rating are based on low frequency and duty cycles to keep T
J
= 25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.