Dmp3098l new prod uc t, Maximum ratings, Thermal characteristics – Diodes DMP3098L User Manual

Page 2: Electrical characteristics, Dmp3098l

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DMP3098L

Document number: DS31447 Rev. 8 - 2

2 of 5

www.diodes.com

October 2013

© Diodes Incorporated

DMP3098L

NEW PROD

UC

T


Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Value

Units

Drain-Source Voltage

V

DSS

-30 V

Gate-Source Voltage

V

GSS

±20 V

Drain Current (Note 5) V

GS

= -10V

Steady

State

T

A

= +25°C

T

A

= +70°C

I

D

-3.8
-2.9

A

Pulsed Drain Current (Note 6)

I

DM

-11 A




Thermal Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Value

Units

Total Power Dissipation (Note 5)

P

D

1.08 W

Thermal Resistance, Junction to Ambient @T

A

= +25°C (Note 5)

R

JA

115 °C/W

Operating and Storage Temperature Range

T

J,

T

STG

-55 to +150

°C




Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Min

Typ

Max

Unit

Test

Condition

OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage

BV

DSS

-30

V

V

GS

= 0V, I

D

= -250μA

Zero Gate Voltage Drain Current

I

DSS

-800 nA

V

DS

= -30V, V

GS

= 0V

Gate-Source Leakage

I

GSS

100

nA

V

GS

=

20V, V

DS

= 0V

ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

V

GS(th)

-1.0 -1.8 -2.1 V

V

DS

= V

GS

, I

D

= -250μA

Static Drain-Source On-Resistance

R

DS (ON)

56
98

70

120

mΩ

V

GS

= -10V, I

D

= -3.8A

V

GS

= -4.5V, I

D

= -3.0A

Forward Transfer Admittance

|Y

fs

|

3.6

S

V

DS

= -5V, I

D

= -2.7A

Diode Forward Voltage (Note 6)

V

SD

-1.26 V

V

GS

= 0V, I

S

= -2.7A

DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance

C

iss

336 1008 pF

V

DS

= -25V, V

GS

= 0V, f = 1.0MHz

Output Capacitance

C

oss

70 210 pF

Reverse Transfer Capacitance

C

rss

49 147 pF

Gate Resistance

R

G



4.6



V

GS

= 0V, V

DS

= 0V, f = 1MHz

SWITCHING CHARACTERISTICS (Note 8)

Total Gate Charge

Q

g



4.0

8.0

nC

V

DS

= -15V, V

GS

= -4.5V,

I

D

= -3.8A



7.8



V

DS

= -15V, V

GS

= -10V,

I

D

= -3.8A

Gate-Source Charge

Q

gs



1.0



Gate-Drain Charge

Q

gd



2.5



Turn-On Delay Time

t

d(on)



6.0 12.0

ns

V

DS

= -15V, V

GS

= -10V,

I

D

= -1A, R

G

= 6.0Ω

Rise Time

t

r



5.0 10.0

Turn-Off Delay Time

t

d(off)



17.6 35.2

Fall Time

t

f



9.5 19.0

Notes: 5. Device mounted on FR-4 PCB on 2 oz., 0.5 in.

2

copper pads and t

≤5 sec.

6. Pulse width

≤10S, Duty Cycle ≤1%.

7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.













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