Dmp3098lsd new prod uc t, Maximum ratings, Thermal characteristics – Diodes DMP3098LSD User Manual

Page 2: Electrical characteristics, Dmp3098lsd

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DMP3098LSD

Document number: DS31448 Rev. 4 - 2

2 of 5

www.diodes.com

January 2014

© Diodes Incorporated

DMP3098LSD

NEW PROD

UC

T




Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Value

Units

Drain-Source Voltage

V

DSS

-30 V

Gate-Source Voltage

V

GSS

±20

V

Drain Current (Note 5) Steady
State

T

A

= +25°C

T

A

= +70°C

I

D

-4.4
-3.3

A

Pulsed Drain Current (Note 6)

I

DM

-15 A



Thermal Characteristics

Characteristic Symbol

Value

Unit

Total Power Dissipation (Note 5)

P

D

1.8 W

Thermal Resistance, Junction to Ambient (Note 5)

R

θJA

70 °C/W

Operating and Storage Temperature Range

T

J,

T

STG

-55 to +150

°C


Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Min

Typ

Max

Unit

Test

Condition

OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage

BV

DSS

-30

V

V

GS

= 0V, I

D

= -250µA

Zero Gate Voltage Drain Current

I

DSS

-1 µA

V

DS

= -30V, V

GS

= 0V

Gate-Source Leakage

I

GSS

±100

nA

V

GS

=

±20V, V

DS

= 0V

ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

V

GS(th)

-1 1.7 -2.1 V

V

DS

= V

GS

, I

D

= -250µA

Static Drain-Source On-Resistance

R

DS(ON)

56
98

65

115

m

Ω

V

GS

= -10V, I

D

= -5.0A

V

GS

= -4.5V, I

D

= -4.0A

Forward Transconductance

g

fs

5.2

S

V

DS

= -10V, I

D

= -5.0A

Diode Forward Voltage (Note 7)

V

SD

-0.5

-1.2 V

V

GS

= 0V, I

S

= -2.6A

DYNAMIC CHARACTERISTICS
Input Capacitance

C

iss

336

pF

V

DS

= -25V, V

GS

= 0V

f = 1.0MHz

Output Capacitance

C

oss

70

pF

Reverse Transfer Capacitance

C

rss

49

pF

Gate Resistance

R

G

4.6

Ω

V

DS

= 0V, V

GS

= 0V, f = 1.0MHz

SWITCHING CHARACTERISTICS

Total Gate Charge

Q

g

4.0
7.8

nC

V

DS

= -15V, V

GS

= -4.5V,I

D

= -5.0A

V

DS

= -15V, V

GS

= -10V,I

D

= -5.0A

Gate-Source Charge

Q

gs

1.0

V

DS

= -15V, V

GS

= -4.5V,I

D

= -5.0A

Gate-Drain Charge

Q

gd

2.5

V

DS

= -15V, V

GS

= -4.5V,I

D

= -5.0A

Turn-On Delay Time

t

d(on)

6.0

ns

V

DS

= -15V, V

GS

= -10V,

I

D

= -1A, R

G

= 6.0

Ω

Rise Time

t

r

5.0

Turn-Off Delay Time

t

d(off)

17.6

Fall Time

t

f

9.5

Notes:

5. Device mounted on 2 oz. 1” x 1” Copper pads on 2” x 2” FR-4 PCB.
6. Pulse width

≤10µS, Duty Cycle ≤1%.

7. Short duration pulse test used to minimize self-heating effect.







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