Dmp3099l new prod uc t, Maximum ratings, Thermal characteristics – Diodes DMP3099L User Manual

Page 2: Electrical characteristics

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DMP3099L

Document number: DS36081 Rev. 3 - 2

2 of 6

www.diodes.com

May 2013

© Diodes Incorporated

DMP3099L

NEW PROD

UC

T





Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Value

Units

Drain-Source Voltage

V

DSS

-30 V

Gate-Source Voltage

V

GSS

±20 V

Drain Current (Note 5) V

GS

= -10V

Steady

State

T

A

= +25°C

T

A

= +70°C

I

D

-3.8
-2.9

A

Pulsed Drain Current (Note 6)

I

DM

-11 A




Thermal Characteristics

Characteristic Symbol

Value

Units

Total Power Dissipation (Note 5)

P

D

1.08 W

Thermal Resistance, Junction to Ambient @T

A

= +25°C (Note 5)

R

θJA

115 °C/W

Operating and Storage Temperature Range

T

J,

T

STG

-55 to +150

°C




Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Min

Typ

Max

Unit

Test

Condition

OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage

BV

DSS

-30 —

— V

V

GS

= 0V, I

D

= -250µA

Zero Gate Voltage Drain Current

I

DSS

-800 nA

V

DS

= -30V, V

GS

= 0V

Gate-Source Leakage

I

GSS

±100 nA

V

GS

= ±20V, V

DS

= 0V

ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

V

GS(th)

-1.0 — -2.1 V

V

DS

= V

GS

, I

D

= -250µA

Static Drain-Source On-Resistance

R

DS(ON)

65
99

mΩ

V

GS

= -10V, I

D

= -3.8A

V

GS

= -4.5V, I

D

= -3.0A

Forward Transfer Admittance

|Y

fs

| —

3.6 — S

V

DS

= -5V, I

D

= -2.7A

Diode Forward Voltage (Note 6)

V

SD

— -1.26 V

V

GS

= 0V, I

S

= -2.7A

DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance

C

iss

563 —

pF

V

DS

= -25V, V

GS

= 0V,

f = 1.0MHz

Output Capacitance

C

oss

48 —

pF

Reverse Transfer Capacitance

C

rss

41 —

pF

Gate Resistance

R

G

10.3 —

V

GS

= 0V V

DS

= 0V, f = 1MHz

SWITCHING CHARACTERISTICS (Note 8)

Total Gate Charge

Q

g

5.2 —

nC

V

DS

= -15V, V

GS

= -4.5V,

I

D

= -3.8A

11 —

V

DS

= -15V, V

GS

= -10V,

I

D

= -3.8A

Gate-Source Charge

Q

gs

1.7 —

Gate-Drain Charge

Q

gd

1.9 —

Turn-On Delay Time

t

d(on)

4.8 —

ns

V

DS

= -15V, V

GS

= -10V,

I

D

= -1A, R

G

= 6.0Ω

Rise Time

t

r

5.0 —

Turn-Off Delay Time

t

d(off)

31 —

Fall Time

t

f

15 —

Notes:

5. Device mounted on FR-4 PCB on 2 oz., 0.5 in.

2

copper pads and t

≤5 sec.

6. Pulse width

≤10µS, Duty Cycle ≤1%.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.










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