Diodes DMP3160L - Manual (Page 2)

DMP3160L
Document number: DS31268 Rev. 8 - 2
2 of 5
www.diodes.com
October 2013
© Diodes Incorporated
DMP3160L
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
-30 V
Gate-Source Voltage V
GSS
±20 V
Drain Current (Note 6) V
GS
= -10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-2.7
-2
A
Pulsed Drain Current (Note 7) I
DM
-8 A
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 6) P
D
1.08 W
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 6) R
θJA
115 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
-30   V V
GS
= 0V, I
D
= -250µA
Zero Gate Voltage Drain Current I
DSS
  -800 nA V
DS
= -30V, V
GS
= 0V
Gate-Source Leakage I
GSS
 
80
800
nA
V
GS
= 12V, V
DS
= 0V
V
GS
= 15V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
-1.3 -1.8 -2.1 V V
DS
= V
GS
, I
D
= -250µA
Static Drain-Source On-Resistance R
DS(ON)

97
165
122
190
mΩ
V
GS
= -10V, I
D
= -2.7A
V
GS
= -4.5V, I
D
= -2.0A
Forward Transfer Admittance |Y
fs
|  5.9  S V
DS
= -5V, I
D
= -2.7A
Diode Forward Voltage (Note 8) V
SD
  -1.26 V V
GS
= 0V, I
S
= -2.7A
DYNAMIC CHARACTERISTICS(Note 9)
Input Capacitance
C
iss
 384.4  pF
V
DS
= -10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
 59.4  pF
Reverse Transfer Capacitance C
rss
 52.8  pF
Gate Resistance R
G
 17.1  Ω
V
GS
= 0V, V
DS
= 0V,
f = 1.0MHz
Total Gate Charge(V
GS
= -4.5V) Q
g
 4.0  nC
V
GS
= -10V/-4.5V,
V
DS
= -15V, I
D
= -3A
Total Gate Charge(V
GS
= -10V) Q
g
 8.2  nC
Gate-Source Charge Q
gs
 0.9  nC
Gate-Drain Charge Q
gd
 1.2  nC
Turn-On Delay Time t
D(on)
 4.8  ns
V
DS
= -15V, V
GS
= -10V,
R
G
= 6Ω, I
D
= -1A
Turn-On Rise Time t
r
 7.3  ns
Turn-Off Delay Time t
D(off)
 22.5  ns
Turn-Off Fall Time t
f
 13.4  ns
Notes: 6. Device mounted on FR-4 PCB. t ≤10 sec.
7. Pulse width ≤10S, Duty Cycle ≤1%.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.