Diodes DMP3130L - Manual (Page 2)

DMP3130L
Document number: DS31524 Rev. 6 - 2
2 of 6
www.diodes.com
October 2013
© Diodes Incorporated
DMP3130L
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
-30 V
Gate-Source Voltage V
GSS
12 V
Continuous Drain Current (Note 5) V
GS
= -4.5V
Steady
State
T
A
= 25 C
T
A
= 70 C
I
D
-3.5
-2.6
A
t<10s
T
A
= 25 C
T
A
= 70 C
I
D
-4.1
-3.2
A
Maximum Continuous Body Diode Forward Current (Note 5) I
S
-1.6 A
Pulsed Drain Current (10μs pulse, duty cycle = 1%) I
DM
-20 A
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
T
A
= 25°C
P
D
0.7
W
T
A
= 70°C 0.4
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
R
JA
184
°C/W
t<10s 115
Total Power Dissipation (Note 6)
T
A
= 25°C
P
D
1.3
W
T
A
= 70°C 0.8
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
R
JA
94
°C/W t<10s 61
Thermal Resistance, Junction to Case R
JC
25
Operating and Storage Temperature Range T
J,
T
STG
-55 to 150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-30   V V
GS
= 0V, I
D
= -250μA
Zero Gate Voltage Drain Current I
DSS
  -1 μA V
DS
= -30V, V
GS
= 0V
Gate-Body Leakage I
GSS
  100 nA V
GS
= ±12V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
-0.6  -1.3 V V
DS
= V
GS
, I
D
= -250μA
Static Drain-Source On-Resistance R
DS (ON)
 59 77
mΩ
V
GS
= -10V, I
D
= -4.2A
 73 95 V
GS
= -4.5V, I
D
= -4A
 115 150 V
GS
= -2.5V, I
D
= -3A
Forward Transconductance g
fs
 8  S V
DS
= -5V, I
D
= -4A
Source-Drain Diode Forward Voltage V
SD
 0.8 -1.25 V V
GS
= 0V, I
S
= -3.0A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
 432 864 pF
V
DS
= -15V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
 87 174 pF
Reverse Transfer Capacitance C
rss
 62 124 pF
Gate Resistance R
G
 4.04  Ω V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
SWITCHING CHARACTERISTICS (Note 8)
Total Gate Charge Q
G
 5.9 11.8
nC
V
DS
= -15V, V
GS
= -4.5V, I
D
= -4.0A
 12 24 V
DS
= -15V, V
GS
= -10V, I
D
= -4.0A
Gate-Source Charge Q
GS
 1.0 2.0
V
DS
= -15V, V
GS
= -4.5V, I
D
= -4.0A
Gate-Drain Charge Q
GD
 3.1 6.2
Turn-On Delay Time t
d(on)
 4.6 9.2
ns
V
DS
= -15V, V
GS
= -10V,
I
D
= -1A, R
G
= 6.0Ω
Rise Time t
r
 6.5 13.0
Turn-Off Delay Time t
d(off)
 27.8 55.6
Fall Time t
f
 15.0 30.0
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing