Electrical characteristics, Typical electrical characteristics, Dmp31d0u – Diodes DMP31D0U User Manual

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DMP31D0U

D

atasheet number: DS35754 Rev. 1 - 2

3 of 7

www.diodes.com

February 2012

© Diodes Incorporated

A Product Line of

Diodes Incorporated

DMP31D0U









Electrical Characteristics

@T

A

= 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage

BV

DSS

-30 - - V

V

GS

= 0V, I

D

= -250

μA

Zero Gate Voltage Drain Current T

J

= 25°C

I

DSS

- - -1

μA

V

DS

= -30V, V

GS

= 0V

Gate-Source Leakage

I

GSS

- - ±3

μA

V

GS

= ±8V, V

DS

= 0V

ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

V

GS(th)

-0.5 - -1.1 V

V

DS

= V

GS

, I

D

= -250

μA

Static Drain-Source On-Resistance

R

DS (ON)

- -

1

Ω

V

GS

= -4.5V, I

D

= -400mA

1.5

V

GS

= -2.5V, I

D

= -200mA

2

V

GS

= -1.8V, I

D

= -100mA

Forward Transfer Admittance

|Y

fs

|

50 - - mS

V

DS

= -3V, I

D

= -300mA

Diode Forward Voltage

V

SD

- -

-1.2

V

V

GS

= 0V, I

S

= -300mA

DYNAMIC CHARACTERISTICS
Input Capacitance

C

iss

- 76 - pF

V

DS

= -15V, V

GS

= 0V,

f = 1.0MHz

Output Capacitance

C

oss

- 9 -

pF

Reverse Transfer Capacitance

C

rss

- 6.43 - pF

Gate Resistance

R

g

- 166.9 - Ω

V

DS

= 0V, V

GS

= 0V, f = 1MHz

Total Gate Charge

Q

g

0.9 - nC

V

GS

= -4.5V, V

DS

= -15V, I

D

= -1A

Total Gate Charge

Q

g

- 1.5 - nC

V

GS

= -8V, V

DS

= -15V,

I

D

= -1A

Gate-Source Charge

Q

gs

- 0.1 - nC

Gate-Drain Charge

Q

gd

- 0.2 - nC

Turn-On Delay Time

t

D(on)

- 4.98 - ns

V

DD

= -10V, R

L

= 10Ω

V

GS

= -4.5V, R

G

= 6Ω

Turn-On Rise Time

t

r

- 5.85 - ns

Turn-Off Delay Time

t

D(off)

- 35.71 - ns

Turn-Off Fall Time

t

f

- 16.64 - ns

Notes:

7. Short duration pulse test used to minimize self-heating effect.



Typical Electrical Characteristics

0

0.2

0.4

0.6

0.8

1.0

0

1

2

3

4

5

-V

, DRAIN -SOURCE VOLTAGE (V)

Fig. 3 Typical Output Characteristics

DS

-I

, D

R

AI

N

C

U

R

R

EN

T

(A

)

D

V

= 4.5V

GS

V

= 2.5V

GS

V

= 1.8V

GS

V

= 1.5V

GS

V

= 1.2V

GS

0

0.2

0.4

0.6

0.8

1.0

0

0.5

1.0

1.5

2.0

-V

, GATE-SOURCE VOLTAGE (V)

GS

Fig. 4 Typical Transfer Characteristics

-I

, D

R

AI

N

C

U

R

R

EN

T

(A

)

D

T = 150 C

A

°

T = 125 C

A

°

T = 85 C

A

°

T = 25 C

A

°

T = -55 C

A

°

V

= -5.0V

DS







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