Diodes DMP32D4S - Manual (Page 2)

DMP32D4S
Document number: DS35822 Rev. 4 - 2
2 of 6
www.diodes.com
November 2013
© Diodes Incorporated
DMP32D4S
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage V
DSS
-30 V
Gate-Source Voltage V
GSS
±20 V
Continuous Drain Current (Note 6) V
GS
= -10V
T
A
= +25°C
T
A
= +70°C
I
D
300
250
mA
Pulsed Drain Current (Note 6) I
DM
-1 A
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Total Power Dissipation
(Note 5)
P
D
370
mW
(Note 6) 540
Thermal Resistance, Junction to Ambient
(Note 5)
R
θJA
348
°C/W (Note 6) 241
Thermal Resistance, Junction to Case (Note 6) R
θJC
91
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-30 — — V V
GS
= 0V, I
D
= -1mA
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
— — -1 µA V
DS
= -30V, V
GS
= 0V
Gate-Source Leakage I
GSS
— — ±10 µA V
GS
= ±16V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage V
GS(th)
-1.4
-1.2 —
— -2.4
-2.0
V
V
DS
= V
GS
, I
D
= -250μA
V
DS
= -5V, I
D
= -1μA
Static Drain-Source On-Resistance R
DS (ON)
— —
2.4
Ω
V
GS
= -10V, I
D
= -0.3A
4 V
GS
= -4.5V, I
D
= -0.25A
Forward Transfer Admittance |Y
fs
| — 6 — S V
DS
= -10V, I
D
= -400mA
Diode Forward Voltage V
SD
— 0.8 1.2 V V
GS
= 0V, I
S
= -300mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
— 51.16 — pF
V
DS
= -15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
— 10.85 — pF
Reverse Transfer Capacitance C
rss
— 8.88 — pF
Gate Resistance R
g
— 275 — Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge Q
g
— 0.6 — nC V
GS
= -4.5V
V
DS
= -10V,
I
D
= -1A
Total Gate Charge Q
g
— 1.2 — nC
V
GS
= -10V Gate-Source Charge Q
gs
— 0.2 — nC
Gate-Drain Charge Q
gd
— 0.3 — nC
Turn-On Delay Time t
D(on)
— 9.86 — ns
V
DS
= -15V, I
D
= -1A
V
GS
= -10V, R
G
= 6Ω
Turn-On Rise Time t
r
— 11.5 — ns
Turn-Off Delay Time t
D(off)
— 31.8 — ns
Turn-Off Fall Time t
f
— 21.9 — ns
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.